a](t)) at any instant t can be obtained from the numerical integration of the field profile over the depletion layer and avalanche layer widths, respectively.
A]), and ratio of avalanche zone width to total depletion layer width ([x.
B]) and lowest ratio of avalanche zone width to total depletion layer width ([x.
First, it is clear that for high reverse gate-channel bias, the depletion layer extends over most of the channel.
gs^ voltage that puts the depletion layer edge near the transition between the zones of increasing and decreasing carrier concentration, creating a perturbation on the |G.
When the bias voltage is changed, the thickness of the depletion layer changes, causing a corresponding change in [Delta].
With this approach, we can control the thickness of a depletion layer as in the Schottky barrier contact controlled method, but rather than varying the bias voltage, we vary the optical illumination intensity.
5a Cross section of a Schottky barrier contacted CPW showing the depletion layer under the center conductor of the waveguide.