The materials used as impurity sources during diffusion are as follows: diborane
B2H6 gas  (diffusion from gas phase) and wafer of boron nitride  or borosilicate glass (diffusion from solid state).
The incorporation of boron atoms in graphene was obtained by different methods: exfoliation of boron-doped graphite , arc discharge of graphite electrodes in the presence of diborane
, thermal decomposition of boron carbide powder , thermal annealing of graphene oxide in presence of boron oxide , hot filament CVD , and chemical vapor deposition (CVD) using solid or gas precursors [7,18-23].
The deposition was at 1000[degrees]C using dichlorosilane (DCS), and phosphine (P[H.sub.3]) and diborane
([B.sub.2][H.sub.6]) were used as the dopants.
V Orti, "Electron propagator theory of ionization energies and dyson orbitals for phydrido, bridge-bonded molecules: diborane
, digallane, and gallaborane," in Structures and Mechanisms, G.
Voltaix Inc, a company involved in the manufacture of a number of electronics products, including germane, diborane
, trisilane, and trimethylboron, has chosen Matthew D Stephens as its executive vice president, sales & marketing.
Li[B.sub.x][H.sub.y]) and/or the formation of diborane
during the hydrogenation and dehydrogenation cycles.
In order to develop selective hosts for anions, we have synthesized a new macrocycle L, from the reaction of isophthalaldehyde and N'-methyl-2, 2'-diaminodiethylamine under high dilution conditions in methanol, followed by diborane
The heats of reaction of diborane
with the methylamines, and of tetramethyldiborane with trimethylamine; the dissociation energy of diborane
Applying the same idea to nanotechnology, Hutchison came up with a process that eliminates diborane
gas and benzene from the production of gold nanoparticles.
The hydride canister treats such gases as arsine, phosphine, diborane
, silane, and organometallics, while the etch-gas canister treats boron trichloride, hydrogen chloride, hydrogen fluoride, dichlorosilane, tetrachlorosilane, and tungsten hexafluoride.
Phosphine (PH3,1% in [H.sub.2]) and diborane
([B.sub.2][H.sub.6],1% in [H.sub.2]) were used as the dopant gases with flow rates ([[PHI].sub.dopant]) of 18 and 20 sccm, respectively, to prepare n-type and p-type microcrystalline Si layers, which were reported elsewhere [25, 27-29].