Ampleon announced the launch of the BLF888E RF power transistor designed for DVB-T UHF asymmetrical wideband Doherty amplifier
Piazzon, "Design of a dual-band GaN Doherty amplifier
The first Doherty amplifier
operates around 2425 MHz .
The conduction angle of the class-C biased peaking device has important role on the efficiency, gain, power and linearity characteristics of the overall Doherty amplifier
. The gain degradation of the ADPA in the load modulation region where the class-C biased peaking device starts to conduct results in poorer power-added efficiency.
Jeong, "A highly linear and efficient three-way Doherty amplifier
using two-stage GaN HEMT cells for repeater systems," Microwave and Optical Technology Letters, Vol.
Techniques such as Doherty amplifier
structures extend high-efficiency device operation to lower power levels, allowing for significantly improved average PA efficiency.
This article presents a Doherty amplifier
with a bias adaptation technique based on a software-defined radio (SDR) transmitter architecture.
Edmund Neo, "A high-efficiency 100-W GaN three-way Doherty amplifier
for base-station applications," IEEE Trans.
This article proposes a new type of power combining network for a Doherty amplifier
based on the use of short transmission lines and lumped capacitors.
In the second paper, a 240 W Doherty amplifier
at 2 GHz for WCDMA is described.