Doherty amplifier

Doherty amplifier

[′dō·ərd·ē ‚am·plə‚fī·ər]
(electronics)
A linear radio-frequency power amplifier that is divided into two sections whose inputs and outputs are connected by quarter-wave networks; for all values of input signal voltage up to one-half maximum amplitude, section no. 1 delivers all the power to the load; above this level, section no. 2 comes into operation.
References in periodicals archive ?
Tenders are invited for: Single-chip ka-band doherty amplifier
Ampleon announced the launch of the BLF888E RF power transistor designed for DVB-T UHF asymmetrical wideband Doherty amplifier applications.
It results in the lack of full load modulation for the CPA and reduced output power of overall Doherty amplifier.
Bao, "A 460MHz Doherty amplifier for IMT-advanced system," Progress In Electromagnetics Research Letters, Vol.
Techniques such as Doherty amplifier structures extend high-efficiency device operation to lower power levels, allowing for significantly improved average PA efficiency.
This article presents a Doherty amplifier with a bias adaptation technique based on a software-defined radio (SDR) transmitter architecture.
Under such circumstances, Sumitomo Electric has succeeded in extending the RF bandwidth of the Doherty amplifier by drawing on its RF power amplifier technology and optimizing the fundamental frequency and the high-order harmonics over a wide frequency range inside the amplifier modules incorporated in the Doherty amplifier.
Edmund Neo, "A high-efficiency 100-W GaN three-way Doherty amplifier for base-station applications," IEEE Trans.
When these circuit innovations are implemented using Cree's high-frequency, high-power GaN HEMTs and the latest generation digital pre-distortion systems, the resulting efficiency improvements can be up to a staggering 15 percentage points greater than that achieved by a conventional Doherty amplifier implemented with silicon LDMOS.
This article proposes a new type of power combining network for a Doherty amplifier based on the use of short transmission lines and lumped capacitors.
Both devices are dual-path designs, and can implement the final stage of a Doherty amplifier with one path as the main amplifier and the other as the peaking amplifier.
A2G35S160-01S and A2G35S200-01S: Two-transistor Doherty amplifier solution covering 3400 to 3600 MHz with 53 W average RF output power (331 W peak), gain of 13.