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Also found in: Acronyms.


(1) (fram) (FRiend spAM) Jokes and information forwarded directly to friends via email as well as social media notifications every time people post something they think is memorable. See spam.

(2) (Ferromagnetic RAM) A non-volatile memory that records bits on a magnetic surface. See MRAM.

(3) (Ferroelectric RAM) A non-volatile, random access memory technology from Ramtron International Corporation, Colorado Springs, CO (www.ramtron.com). With product shipping since 1993, F-RAM was the first commercial non-volatile RAM on the market using standard CMOS fabrication. It was initially designed as a high-performance alternative to EEPROM memory with write speed that is orders of magnitude faster and virtually unlimited write cycles. Having the attributes of RAM and the non-volatility of flash, F-RAM may eventually replace flash, DRAM and SRAM.

Polarization in a Crystal
F-RAM uses a ferroelectric capacitor composed of a crystal made up of lead and oxygen atoms plus zirconium or titanium. The crystal has two stable states. When an electric field is applied, the zirconium or titanium atom changes position. The read circuit detects the polarity of the atom as a difference in voltage, which determines the 0 or 1.

The ferroelectric name was chosen because the hysteresis characteristic of the capacitor's charge is similar to ferromagnetic materials. It is somewhat misleading because the capacitor is not made of iron (ferrous), and it is not influenced by magnetic fields. See future memory chips.

The Perovskite Crystal
Ferroelectric capacitors use perovskite crystals, which are found in certain rocks. Named after Russian mineralogist L. A. Perovski, the red dot in the middle is the titanium or zirconium atom, which changes its position. (Image courtesy of Ramtron International Corporation, www.ramtron.com)

Easy Integration
Providing the fastest non-volatile memory in this microcontroller (MCU), a small amount of F-RAM is integrated on this chip with SRAM and flash memory, input/output and processing circuits. (Image courtesy of Ramtron International Corporation, www.ramtron.com)

Just A Few Bits
These Ramtron chips provide non-volatile storage of two or four F-RAM bits in order to maintain the state of a single switch or relay (top) or an LED (bottom). When power is turned back on, these "Nonvolatile State Saver" ICs provide the last known state. (Image courtesy of Ramtron International Corporation, www.ramtron.com)
References in periodicals archive ?
Toshiba will boost its research and development in FeRAM with an eye on its wider use, including high-performance mobile digital equipment and computers.
The 32-megabit device features a ''chained'' memory cell structure expected to facilitate further advances to higher-density FeRAM, the company said.
Farnell element14 has announced the new Panasonic NFC Tag ICs and evaluation boards with built in FeRAM and AES-128 encryption.
Ferroelectric Thin Films Markets Report: New MEMS Applications are Broadening the Traditional Inkjet, IPDs and FeRAM Scope
Customers who may have been faced with limited options in the past can now use the 4Mb serial MRAM to directly replace EEPROM, Flash and FeRAM, and experience no write delays and unlimited read/write endurance," said Phill LoPresti, president and CEO of Everspin Technologies.
The devices are housed in low profile 8-pin RoHS-compliant DFN packages that are pin-out and footprint compatible with serial EEPROM, Flash and FeRAM products in comparable DFN or SOIC packages.
TOKYO -- Toshiba Corporation (TOKYO:6502) today announced the prototype of a new FeRAM --Ferroelectric Random Access Memory--that redefines industry benchmarks for density and operating speed.
As a ferroelectric material, PZT is well known for being the basis of commercial FeRAM chips, and for other novel memory storage products.
Ferroelectric RAM (FRAM): FRAM or FeRAM is a memory technology in which the switching occurs by the alteration of the polarization state of a ferroelectric material.
The company has made recent inventions in FeRAM and has developed a silicon- based design of its HCS MRAM.
Tegal is the leading company in plasma etch technology for several types of non-volatile memory devices, such as FeRAM, MRAM, RRAM and polymeric memories," said Murali Narasimhan, Tegal's recently appointed Vice President of Marketing.