Subsequently, [15, 16] using computer simulation studied the behaviour of InGaAs/AlAs RTD in an AC electric field in the model that more accurately coincides with the experiment with square barriers of the finite width and height, with the Fermi distribution of electrons over the energy states as well as in the presence of the DC voltage.
The purpose of this work is to calculate, using computer simulation, the InGaAs/AlAs RTD response to an AC electric field within a wide range of frequency and field amplitudes, taking into consideration the Fermi distribution of electrons over the energy states and in the presence of the DC voltage.
We shall compare the calculations in the model with the monoenergetic electrons and in the model with the Fermi distribution.
Now, we shall consider the model that takes into account the Fermi distribution of electrons over the energy states and the presence of the DC voltage.
Thus, when taking into account the Fermi distribution in the case of high frequencies h[omega] > [GAMMA], the increase of the resonant energy level width (i.e., the decrease in the ratio [[epsilon].sub.F]/[GAMMA]) leads to the result corresponding to the one obtained within the framework of the relevant model with monoenergetic electrons.
Now, we shall consider the case of the Fermi distribution of electrons over the energy states in the presence of the DC voltage.
On the other hand, when the method is applied to obtaining the line shape (or self-energy) function for the electron-phonon system, the Fermi distribution functions for the electrons and the Bose distribution functions for the phonons are simply added [1-11], which violates the "population criterion" suggesting that the Fermi and Bose distribution functions for electrons and phonons should be combined in multiplicative forms.
where [(X).sub.[alpha][beta]] = <a[absolute value of (X)][beta]> for electron states a and p, is the I component of the electron position vector, jk is the k component of the single electron current density operator, fa is the Fermi distribution function for an electron with energy [E.sub.[alpha]], and [E.sub.[alpha][beta]] = [E.sub.[alpha]] - [E.sub.[beta]].
It allows introduction of concepts such as atomic transitions, black body radiation, the Boltzmann distribution, molecular orbitals, the Fermi distribution
, band theory, interference, soaps and soap films.