# Fermi energy

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## Fermi energy

[′fer·mē ‚en·ər·jē]
(statistical mechanics)
The average energy of electrons in a metal, equal to three-fifths of the Fermi level.
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.
References in periodicals archive ?
Here, the parameters [[delta].sup.2] = [[(U - E).sup.2] - [s.sup.2.sub.[+ or - ]]/[h.sup.2][v.sup.2.sub.F] - [k.sup.2.sub.y], and [[eta].sup.2] = ([E.sup.2] - [s.sup.2.sub.[+ or -]]/[h.sup.2][v.sup.2.sub.F] - [k.sup.2.sub.y], with [v.sub.F] being the Fermi velocity. We mention, concerning the component [[phi].sub.B], that, through the diagonalization of (2), one can easily find
The falsifi-ability of the calculated [tau] was verified by obtaining a kind of Fermi velocity which is comparable to the sound velocity in liquid water.
Moreover, the maximum value of Fermi velocity considering the SW defects is 5.25 x 105 m/s which is about 50% less than the perfect GNR.
The drift in graphene is limited to the Fermi velocity [v.sub.F] [approximately equal to] [10.sup.6] m/s that is 10 times than that of a silicon ([v.sub.i] ~ [10.sup.5] m/s).
The conductance is presented in units of [G.sub.0] = 2[e.sup.2] [m.sup.*][[upsilon].sub.F][L.sub.y]/[h.sup.2], where [[upsilon].sub.p] is the Fermi velocity and [L.sub.y] is the longitudinal length of the system.
where [v.sub.f] is the Fermi velocity and [sigma] = ([[sigma].sub.x], [[sigma].sub.y]) are the Pauli matrices.
[k.sub.g] is defined as [k.sub.g] = (V/2vF[??])[square root of ([V.sup.2] + 2[t.sup.2.sub.[perpendicular to])/([V.sup.2] + [t.sup.2.sub.[perpendicular to]) where [v.sub.F] = ([square root of (2/3)) at [??] [approximately equal to] 1 x [10.sup.6] [m.sup.*] [s.sup.-1] is the Fermi Velocity. k is defined as k = [+ or -][2[m.sup.*](E - [E.sub.c])/[[[??].sup.2]].sup.1/2] + kg where [E.sub.c] = [E.sub.g]/2 + {[V.sub.1] + [V.sub.2])/2 and Eg is the energy gap.
Equation (7) provides a quantitative description of the quantum capacitance of bilayer graphene in terms of Fermi velocity , carrier density, temperature, and fundamental physical quantities.
where [[upsilon].sub.F] is the Fermi velocity corresponding to Fermi-energy [E.sub.F], [V.sub.g] is the gate voltage, [V.sub.sd] is source-drain voltage, B is the applied magnetic field, m* is the effective mass of the charge carrier, h is the reduced Planck /s constant, [omega] is the frequency of the applied microwave field with amplitude [V.sub.ac] and [V.sub.b] is the barrier height.

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