Ferroelectric RAM

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References in periodicals archive ?
Liao, "Ferroelectric memory based on nanostructures," Nanoscale Research Letters, vol.
He covers various misconceptions held by researchers; the mathematical treatment of ferroelectrics; designing with materials; devices and fabrication processes; high permittivity dielectrics; ferroelectric memory devices, pyroelectric devices; and several other related subjects over the course of the bookAEs eleven chapters.
The board also includes an RGB LED, two push-button switches, an onboard programmer/debugger and USB-UART/I2C bridge functionality block, and a Cypress F-RAM ferroelectric memory for nonvolatile data storage.
Their potential to be used as high permittivity dielectrics [1-6], organic ferroelectric memory devices [7, 8], electrostrictive actuators [9-12], and high energy density capacitors [13-20] has been widely studied over the last few decades.
Jennifer Ernst, chief strategy officer at Thinfilm, adds that smart label technology is "an integrated system of components that could include memory, sensors, logic, displays and batteries." Thinfilm uses ferroelectric memory to indicate the temperature of perishable goods.
So selecting a suitable buffer layer and corresponding processing conditions is still essential to improve the performance of ferroelectric memory devices.
Chin, "Low voltage lead titanate/Si one-transistor ferroelectric memory with good device characteristics," Applied Physics Letters, vol.
In ferroelectric memory the direction of molecules' electrical polarization serves as a 0 or a 1 bit.
Applications discussed include ferroelectric memory devices, ultrasonic motors, and acoustic transducers.
The author covers various misconceptions held by researchers; the mathematical treatment of ferroelectrics; designing with materials; devices and fabrication processes; high permittivity dielectrics; ferroelectric memory devices, pyroelectric devices; and several other related subjects over the course of the bookAEs eleven chapters.
The single phase BiFe[O.sub.3] (BFO) materials with perovskite structure have aroused wide concerns due to its high curie temperature (TN) of 1103 K and Neil temperature ([T.sub.C]) of 643 K [1], which make it a most promising candidate in ferroelectric memory storage and magnetoelectric devices [2-5].
As with all members of the FerVID family, the MB89R112 series uses ferroelectric memory (FRAM) for fast write speeds, high-frequency rewritability, radiation tolerance and low-power operation.