(A ferroelectric material
has electrical polarization that is reversed by application of an electric field.) Their findings, published online in the journal Science Advances, may provide knowledge needed to accelerate the design of functional materials for diverse applications.
Indeed, polarization in a ferroelectric material
is a function of the applied electric field cycle's numbers.
The ferroelectric material
in F-RAM memory cells is highly resistant to data corruption caused by radiation or magnetic field exposure, providing soft error rate immunity for medical, aerospace and defense applications.
BNT is a ferroelectric material
having [Bi.sup.3+] and [Na.sup.+] ions on the A-sites of AB[O.sub.3] type perovskite structure with a rhombohedral symmetry.
The thermodynamic equation of a ferroelectric material
may be written as
likewise displays an analogous electrical property called a permanent electric polarisation, which originates from electric dipoles consisting of equal, but oppositely charged ends or poles.
The perovskite [Sr.sub.2]SbMn[O.sub.6] (SSMO), which belongs to the double perovskite family (Ortiz-Diaz, 2007) was synthesized and characterized by Ivanov (2009) (Cheah, et al., 2006), who reported it as a ferroelectric material
in the tetragonal phase space group (s.
The motivation of this study was to combine the benefit of the soft polymer interlayer to reduce the clamping effect of the matrix with the benefit of the additional polymer shell to adjust the ferroelectric material
volume ratio for different transducer applications by using fibre bundle processing .
Another approach for the application of ferroelectric material
in the biosensor was proposed by Li and coworkers .
Abundance of diverse information on physical and structural properties allegedly allows regarding it as a model ferroelectric material
. However, for a number of reasons it is problematic to agree on the details of the phase transition mechanism.
That means, [alpha] and [beta] values depend on the specific effect of mechanical stresses on the ferroelectric material
and parameters to be adjusted with reported experimental data.
Oxide ferroelectric material
used in the FRAMs is reduced by hydrogen gas generated during the conventional semiconductor process, and the reaction causes the degradation of the ferroelectricity.