FinFET


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FinFET

(FIN Field Effect Transistor) A 3D transistor architecture that uses a raised channel (the "fin") from source to drain. FinFETs replaced CMOS for technology nodes smaller than 20 nm. For example, Intel's Tri-Gate transistors are a type of FinFET. See Tri-Gate transistor, CMOS, FET and MOSFET.
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References in periodicals archive ?
To comprehend Global (United States, European Union and China) FinFET Technology market dynamics in the world mainly, the worldwide FinFET Technology market is analyzed across major global regions.
In this section, we overview the FinFET firstly and then optimize the Dual Threshold FinFETs based on the modulation of the gate work function, the silicon body thickness, and the oxide thickness according to the theories.
The [R.sub.sd] variations for SOI FinFETs are dominantly affected by NiSi/Si contact resistance [20, 27].
In reference 1, several real failing silicon chips manufactured in a FinFET technology with known timing-related defects identified by PFA were used to validate the proposed methodology.
A 64-bit carry propagate adder (CPA) designed in 32-nano meter FinFET technology, operated in 1.3 V supply voltage shown in fig.
Using 10nm FinFET, the Snapdragon 835 processor will offer a smaller chip footprint, providing OEMs more usable space inside upcoming products to support larger batteries or slimmer designs.
It will be the first time the 14-nanometer FinFET process is used for a SoC aimed at midrange phones, previously only used for premium products, the company said.
According to Samsung, its new 14nm LPP process, incorporating three-dimensional (3D) FinFET structure on transistors, enables significant performance boost and low power consumption.
Jha, "Low-power FinFET circuit synthesis using surface orientation optimization," in Proc.
The 14nm gate length FinFET is used as target because it will be used in the next generation of product by semiconductor manufacturing processes in a wide range of applications, namely, SRAM in this case.
Time-dependent, dielectric breakdown in transistors, including those based on HKMG and FinFET technology, responds to the electric field across the gate oxide with the creation of charge traps that permit current to tunnel through the insulator.
The work function difference between the gate and the channel of a FinFET dictates the threshold voltage of the device.