FinFET


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FinFET

(FIN Field Effect Transistor) A transistor architecture that uses raised channels, called "fins," from source to drain. Intel's Tri-Gate transistors are a type of FinFET. See Tri-Gate transistor, FET and MOSFET.
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Diagnosing Timing Related Cell Internal Defects for FinFET Technology," International Symposium on VLSI Design Automation and Test, 2014.
A 64-bit carry propagate adder (CPA) designed in 32-nano meter FinFET technology, operated in 1.
BTI is believed to occur primarily at the silicon-insulator interface; thin HKMG transistors and especially FinFETs are most likely to experience BTI.
In work led by Peide Ye, an associate professor of electrical and computer engineering, the Purdue researchers are the first to create finFETs using a technology called atomic layer deposition.
Cadence continues to partner with TSMC to deliver the innovation and deep technical expertise that is required to address evolving requirements for the latest process nodes, such as 7nm FinFET Plus and 12FFC, and within growth industries, such as automotive, said Dr.
The three proposed full adders implementations based on FinFET are discussed in section 3.
In addition to being built on the most advanced 10nm FinFET process technology, the new Exynos 9 Series 8895 incorporates Samsung's cutting-edge technologies including a 2nd generation custom CPU, gigabit LTE modem, and more," said Ben Hur, Vice President of System LSI marketing at Samsung Electronics.
The frequency gains from 14nm FinFET taper off as the clock rises, which implies that the process is more focused on power efficiency than raw frequency gain.
According to the company's executive vice president and co-operating officer, Chiang Shan-yi, Fab 14 is TSMC's first factory to mass-produce 16-nanometer FinFET transistors and the world's first factory to begin volume production of 20nm system-on-chips.
A sampling of topics: sidewall angle influence on the FinFET analog parameters, distortion analysis of triple-gate transistor in saturation, semiconductor surface cleaning and conditioning challenges beyond planar silicon technology, the influence of substrates on the carbon nanotube growth process, electromigration modeling for interconnect structures in microelectronics, coupled quantum dot cell dynamics, silicon microtips with self-asligned integrated electrodes, simple MEMS-based incandescent microlamps, zinc-oxide surface acoustic wave device fabrication, and influence of the interferers in the nitrite detection by using planar electrochemical sensors.