Fowler-Nordheim tunnelling

Fowler-Nordheim tunnelling

(electronics)
(US: "tunneling") The quantum mechanical effect exploited in EAPROM and Flash Erasable Programmable Read Only Memory. It differs from Frenkel-Pool Tunnelling in that it does not rely on defects in the semiconductor.

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Philips Semiconductors' CMOS18 Flash utilizes the Fowler-Nordheim tunnelling to program and erase the memory cells, requiring a much smaller charge pump that only delivers microamps.