gallium arsenide

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Related to GaAs: AlGaAs

gallium arsenide

[′gal·ē·əm ′ärs·ən‚īd]
(inorganic chemistry)
GaAs A crystalline material, melting point 1238°C; frequently alloys of this material are formed with gallium phosphide or indium arsenide.

gallium arsenide

An alloy of gallium and arsenic compound (GaAs) that is used as the base material for chips. Several times faster than silicon, it is used in high frequency applications such as cellphones, DVD players and fiber optics. In 2001, Motorola developed a technique that places a spongy layer between gallium arsenide and silicon on the same wafer. Combining these two materials yields a higher-speed product at a lower cost. See gallium nitride.
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"We are very grateful to Eesti Gaas and Infortar for choosing Damen to build their new LNG bunkering vessel.
Also according to Interpretation 4 (AU-C 9700.19), it would be appropriate in a dual standard report for an auditor to revise the independence-related statement ordinarily prescribed by AS 3101 to reflect the circumstances of the engagement to read, for example, "We are required to be independent with respect to the Company in accordance with the relevant ethical requirements relating to our audit." According to GAAS (AU-C 200.A15), the relevant ethical requirements consist of the AICPA Code of Professional Conduct and any and all applicable, more restrictive regulatory rules of state boards of accountancy and any other agencies.
Ga(As)Sb QD formation on GaAs substrate/buffer is initiated by supply of Ga and Sb atoms only.
The RSS method is particularly suited for probing the local atomic and/or nanoscale structural changes in the InSb ultrathin films grown on SI GaAs while making the careful analysis of its subtle spectral variations.
In the end of simulation, a higher conversion of a 29.7% efficiency was recorded after a small-time computation, compared to the initial structure which has an efficiency of 21%, and new layers configuration were set to construct a new optimized GaAs single solar cells as shown in
The edges of rectangles were precisely aligned along the <001> directions that are known to be the preferred rolling directions on (100) GaAs, as a consequence of Young's modulus anisotropy in cubic semiconductor crystals [16,17].
GaAs has dominated the world of wireless communication, military applications and space applications at high frequency since long.
The report covers the present scenario and the growth prospects of the global GaAs devices market for the period 2016-2020.
Target: AS VA[micro sign]rguteenus Valdus and Elering Gaas AS
As a result of the merger, AS Vorguteenus Valdus and Elering Gaas AS were dissolved and Elering AS will continue its business activities as the joint electricity and gas system operator.
According to the company, ACZONE Gel, 7.5% was approved based on co-primary endpoints of the GAAS and lesion counts (20 to 50 inflammatory and 30 to 100 non-inflammatory lesions at baseline).