"Analytical models of ion-implanted GaAs FET
's." IEEE Transactions on Electron Devices, 32(1): 18-28, 1985
Carlos Fuentes, principal engineer at Giga-tronics, agreed, noting that GaAs FET
switches had good linearity at microwave frequencies even though their power handling was limited.
The result is a GaN power FET with eight times the power density of a GaAs FET
and the world's highest output power at the 6GHz frequency level.
Using one level of broadband quadrature combiners, plus the use of a robust GaAs FET
technology, allows the modules to absorb 100 percent reflected power even when the module is operating at full output power.
MMIC technology can be used to make very compact and inexpensive phase shifters, power amplifiers and low-noise amplifiers that can be integrated with control circuits into modules at every radiating element.
PIN diode and GaAs FET
switches cannot offer this combination of features although these technologies have advantages in other types of applications.
ZXNB controllers provide biasing for up to three GaAS FET
LNA stages and an active mixer.
The GaAs FET
switch, however, did have some significant features.
Receiving modules at 20 GHz have achieved noise figures of approximately 3 dB with GaAs FET
technology and lower with HEMT technology.