The result is a GaN power FET with eight times the power density of a GaAs FET
and the world's highest output power at the 6GHz frequency level.
The model SM2025-44L is an ultra-linear GaAs FET
amplifier designed for 3G and video broadcast applications.
ZXNB controllers provide biasing for up to three GaAS FET
LNA stages and an active mixer.
To enhance the product line for the global market, the company has developed MGFC47B3538B, an internally impedance matched high output power GaAs FET
for the Central and Eastern European markets with lower distortion at low electric current, and Mitsubishi Electric will continue expansion of its power amplifier business for WiMAX base transceiver stations.
The model AM052535MM-BM is a high voltage GaAs FET
power amplifier that operates over the frequency band of 0.
California Eastern Laboratories has introduced a 10W medium power GaAs FET
With IEEE establishing a global standard system specification, we have developed 3 new GaAs FET
internally impedance matched high output power devices, and started promotion of the WiMAX base transceiver station business.
Kacprzak, "Computer Calculation of Large-signal GaAs FET
Amplifier Characteristics," IEEE Transactions on Microwave Theory and Techniques, Vol.
California Eastern Laboratories has announced the availability a new 10W Medium Power GaAs FET
The result is a GaN power FET with six times the power density of a GaAs FET
and the world's highest output power at the 9.
Design of a Low Phase Distortion GaAs FET
Power Limiter," IEEE Transactions on Microwave Theory and Techniques, Vol.
TAEC has announced what is said to be the industry's first 60 W internally matched C-Band GaAs FET
designed to support extended C-Band satellite communications.