Gunn Diode

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Related to Gunn Diode: Tunnel diode, PIN diode, IMPATT diode

Gunn diode

[′gən ¦dī‚ōd]
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.
The following article is from The Great Soviet Encyclopedia (1979). It might be outdated or ideologically biased.

Gunn Diode


a semiconductor device whose operation is based on the Gunn effect.

The basic element of the Gunn diode is a semiconductor crystal made of gallium arsenide, indium phosphide, or the like, from one to hundreds of microns thick and joined to two ohmic contacts. The crystal’s specific resistance is from ~0.001 to ~0.01 ohm·m. The Gunn effect arises when the critical field intensity (approximately 300 kilovolts per meter for gallium arsenide) is reached. Gallium arsenide is used in the manufacture of industrial Gunn diodes. The diodes are used for amplification and generation of electric oscillations, with a power on the order of several kilowatts (under impulse operating conditions) or hundreds of milliwatts (under constant-current operating conditions) at frequencies from ~0.1 to ~100 million kilocycles; they are used also in making the fast-acting logical and functional elements of electronic devices.

The Great Soviet Encyclopedia, 3rd Edition (1970-1979). © 2010 The Gale Group, Inc. All rights reserved.
References in periodicals archive ?
Another consideration is that it is easy to introduce a second microwave diode with a Gunn diode when both are used as naked semiconductor die.
Harvey has a long history of system design for telecommunications, and for the last eight years has participated in the evolution of millimeter radios from Gunn diode or multiplier-based FSK technology, through GaAs pHEMT MMIC-based linear radios.
Using a lower frequency FET oscillator and tripler eliminate the need for the more expensive, less reliable Gunn diode fundamental oscillator.
Dielectric resonators are commonly used in microstrip oscillators and filters, in which their |TE.sub.01|Delta~~ mode is resonated.|2~ They are also available with a center hole, in which the E-field of this mode is practically zero, for attaching in microstrip filters with nylon screws, for example, or to integrate a Gunn diode, as shown in Figure 2.
To demonstrate this technology for mm-wavelengths, a 37 GHz active notch antenna was built using a Gunn diode on a 0.762 mm RT/duroid 5880 substrate.
In the configuration of the first active patch antenna, [4] a Gunn diode was imbedded in a rectangular microstrip patch antenna.
The 46 to 64 GHz lumped-element Gunn VCO that was downconverted was varactor tuned at fundamental frequency, and output was obtained from the in-situ generated second harmonic frequency of the Gunn diode.[1,2] A hyperabrupt junction GaAs varactor was used as the tuning element and contributed to the broadband linear tuning range exhibited by the VCO.
It has thereby enhanced the understanding of Gunn diode and VCO operation and performance, and provided new opportunities in VCO and oscillator design to meet advanced system needs.
Nonlinear circuit analysis of Gunn diode VCOs is quite difficult because of the presence of two non-linear devices coupled to each other.
Gunn diodes are produced for mm-wave applications in large volumes, such as in radio links and door openers, and the technology is fairly mature today.
Gunn diodes are used with patch antennas to realize space power combining oscillators.(1) In addition, frequency-agile microstrip antennas can be obtained with varactor diodes(2) and a photodiode can be set on the patch layer to demodulate the lightwave signal for optical fiber feeding.(3) Monolithic amplifiers have been integrated into patch antennas,(4)(5) and transistors have been used for low noise amplification(6) or for integrated oscillators.(7)
The RF power was generated using a sweep generator and harmonic multipliers up to 100 GHz, and Gunn diodes with waveguide doublers for frequencies above 1 00 GHz.