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The fully matched GaN HEMT transistors complement two previously released packaged MMICs, designated the CMPA5585025F and CMPA801B025F, which can also be used as drivers for the CGHV96050 or CGHV96100.
25um GaN-on-SiC HEMT process has been qualified to operate up to a drain voltage of 40 volts with industry-leading reliability.
Known as MAX (Microwave Anisotropy Experiment), this balloon-borne sky survey uses the same telescope as the ACME experiments but relies on bolometers rather than HEMTs to detect the microwave background.
Up until now, Fujitsu and Fujitsu Laboratories have succeeded in producing 350 mW of power using power amplifiers that employ GaN HEMTs.
Fujitsu will continue with development for further advancements of gallium nitride (GaN) HEMTs for next-generation high-speed wireless communication.
In high efficiency applications, Cree GaN HEMT RF transistors help reduce the size and weight of LTE cellular network transmitters and simplify thermal management.
More efficient GaN HEMT amplifiers with high output power, high-field electron velocity and high-breakdown fields are expected to replace TWTAs in communication satellites.
The Cree/AWR PDK for GaN HEMT MMIC process is available now.
In addition, the TPH3002PD and TPH3002PS TO220-packaged 600 V GaN HEMTs have been released for use in smaller, lower power applications such as adapters and all-in-one computer power supplies.
M/A-COM Technology Solutions has announced the launch of a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.
The goals of Phase II will involve optimization of the AlInN HEMT structures and fabrication of HEMT devices for X-band electronics applications in collaboration with leading-edge GaN foundries.
Transphorm will present its JEDEC-qualified GaN (Gallium Nitride) on Silicon HEMT (high electron mobility transistor) products and applications based on its proprietary EZ-GaN(TM) technology.