References in periodicals archive ?
WE1E-5: Dynamic Gate Bias Technique for Improved Linearity of GaN HFET Power Amplifiers
Quinn, "Large-signal Modeling of Microwave Gallium Nitride-based HFETs," Proceedings of the Asia-Pacific Microwave Conference, Vol.
WE5C-7: Performance of AlGaN/GaN HFETs Fabricated on 100 mm Silicon Substrates for Wireless Base Station Applications
TU3C-4: High Temperature Performances of AlGaN/GaN Power HFETs
TriQuint will release a number of new products at this year's MTT-S IMS Exhibition that complement its vision including packaged HFET (heterojunction field-effect transistor) products for base station, point-to-point radio and general purpose amplifier applications.
TH3D-2: Invited: AlGaN/GaN HFET Amplifier Performance and Limitations
The four new devices are: MMH3111N: - GaAs HFET - 250 MHz to 3 GHz - 21.
HFET is an ideal choice for high dynamic range requirements because of its low output capacitance resulting in low transient time.
A broad range of circuits in MESFET, HFET, BJT, HBT, BiCMOS, and CMOS technologies is covered.
5-micron gate length, HFET process which enables world class electrical performance and increased environmental robustness under the most demanding operating conditions.
AUSTIN, Texas -- Extended GPA Device Family Now Provides Designers with High-Volume, Cost-Effective Source Of InGap HBT and HFET GPAs for Nearly All Class A Applications
Kohn, "InGaP/InGaAs HFET with High Current Density and High Cutoff Frequencies," IEEE Electron Dev.
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