References in periodicals archive ?
The fabricated normally on HFET exhibits a threshold voltage of -2.3 V, [I.sub.dmax] of 370 mA/mm, RON of 5m[ohm] x [cm.sup.2], and Gm of 124 mS/mm.
(171) Bertrand Le Gallic, 'Using Trade Measures in the Fight Against IUU Fishing: Opportunities and Challenges' in HFET, 2004 Japan Proceedings (2004) at 6.
WE1E-5: Dynamic Gate Bias Technique for Improved Linearity of GaN HFET Power Amplifiers
Quinn, "Large-signal Modeling of Microwave Gallium Nitride-based HFETs," Proceedings of the Asia-Pacific Microwave Conference, Vol.
WE5C-7: Performance of AlGaN/GaN HFETs Fabricated on 100 mm Silicon Substrates for Wireless Base Station Applications
TU3C-4: High Temperature Performances of AlGaN/GaN Power HFETs
Mitsubishi Electric supplies industrial and consumer markets with GaAs FETs, and modules and MMICs using HBT, PHEMT, MESFET HEMT, HFET, MOS and LDMOS technologies.
The amplifiers range from solid state PHEMT and HFET to high power tubes with applications from commercial wireless to military radar.
HFET is an ideal choice for high dynamic range requirements because of its low output capacitance resulting in low transient time.
Kohn, "InGaP/InGaAs HFET with High Current Density and High Cutoff Frequencies," IEEE Electron Dev.
Figure 3 shows a schematic of the test circuit, which is a 0.5W GaAs/AlGaAs HFET power amplifier.
These new state-of-the-art power GaAs HFET devices have structures that are based on heterojunctions comprising A1GaAs/GaAs, InGaP/GaAs and InAlAs/InGaAs.
Encyclopedia browser ?
- Heym, Georg
- Heym, Stefan
- Heymann Steinthal
- Heymans, Corneille
- Heymans, Corneille Jean François
- Heyn's reagent
- Heyrovsky, Jaroslav
- Heyse, Paul
- Heyse, Paul Johann Ludwig von
- Heyward, DuBose
- Heyward, Thomas
- Heywood, Charles
- Heywood, John
- Heywood, Thomas
- HF akylation
- HFC network
- HFS Extended
- HH beacon
- HH object
- Hi Matsuri
- hi pot
Full browser ?