The electrical sheet resistance, DC conductivity, Hall mobility
and charge carrier concentration of the PEDOT:PSS film were measured using van der Pauw method .
Both of the dark conductivity and Hall mobility
were significantly enhanced after annealing.
The values of carrier concentration ([n.sub.H]) and Hall mobility
([[mu].sub.H]) were calculated using equations :
Figure 5 shows the trends of Hall mobility
and hole concentration against temperature.
where [[mu].sub.Hn] denotes the carriers Hall mobility
, G is the geometrical correction factor, L is the emitter-collector distance, [W.sub.E] is the emitter with (see figure 1) and [I.sub.C] = [I.sub.C1](0) + [I.sub.C2](0).
The resistivity and Hall mobility
of semiconducting materials are fundamental properties investigated during product and process development.
Typical room temperature Hall mobility
of 10,500 to 11,000 [cm.sup.2]V-sec and Hall sheet carrier concentration of 3.5E12/[cm.sup.2] are measured on undoped cap layer calibration samples.
Caption: Figure 6: Plot of resistivity ([rho]), carrier concentration (n), and Hall mobility
([[mu].sub.H]) versus Ag dopant concentrations in the SnO thin films.
The carrier concentration and Hall mobility
were measured using the van der Pauw method, and Hall effect measurement (Nanometrics/Accent/NAN-HL5500PC) was performed at room temperature.
where [MATHEMATICAL EXPRESSION NOT REPRODUCIBLE IN ASCII] denotes the carriers Hall mobility
, G is the geometrical correction factor and [I.sub.D] is the drain current.
Katagiri reported that n-type conductivity of homoepitaxial diamond with a Hall mobility
of 410 [cm.sup.2] [V.sup.-1] [s.sup.-1] at room temperature .
where [[mu].sub.Hn] is the Hall mobility
of electrons in the p-well, and Y is a geometrical parameter given approximately by y [j.sub.n] < Y < [y.sub.jp].