The type of charge carriers, concentration (nH) and Hall mobility
(pH), have been estimated from Hall measurements for un-doped Sn[O.
Hn] denotes the carriers Hall mobility
, G is the geometrical correction factor, L is the emitter-collector distance, [W.
The resistivity and Hall mobility
of semiconducting materials are fundamental properties investigated during product and process development.
where [MATHEMATICAL EXPRESSION NOT REPRODUCIBLE IN ASCII] denotes the carriers Hall mobility
, G is the geometrical correction factor and [I.