heterojunction

(redirected from Heterostructure)

heterojunction

[¦hed·ə·rō′jəŋk·shən]
(electronics)
The boundary between two different semiconductor materials, usually with a negligible discontinuity in the crystal structure.
References in periodicals archive ?
As a result, a MJ SC has a quite complicated structure (see Figure 1), consisting of many layers with different types of interfaces including chemically dissimilar III-V/Ge interface (the GaInP/Ge heterostructure is used as the bottom subcell of the triple-junction GaInP/GaInAs/Ge SC).
It has been recently shown that manufacturing diffusing- or implanted-junction rectifiers in a heterostructure (H) and optimization time of annealing of dopant and/or radiation defects give us possibility to increase sharpness of p-n-junctions [10-12].
Let there be a 1D heterostructure composed of an array of homogeneous semiconductor layers (the layer boundaries being perpendicular to the Ox-axis) exposed to the E-field.
Moreover, the tunneling mode in a heterostructure constructed by epsilon-negative metamaterials and TSNG ones are also studied.
The AlGaAs/GaAs heterostructure consists of a 10 nm GaAs cap layer, a 15 nm [Al.sub.x][Ga.sub.1-x]As layer (x = 19.6%) followed by a delta doping layer Si [delta]-doping with a density of 8x[10.sup.12] [cm.sup.-2].
In this case heteropolyacid clusters could penetrate into the bulk of the polymer, and a bulk heterostructure was formed.
NIST researchers recently have measured the single electron spectrum of a semiconductor heterostructure containing InAs self-assembled quantum dots.
Initially Nortel has launched 14 metro optical components and modules such as a 2.5Gb/s buried heterostructure transmitter, a 10Gb/s APD preamp receiver, a 1310 nanometre 10Gb/s transponder module and 10Gb Ethernet switch router solutions.
These GaAs FETs for base station and satellite communications power amplifiers feature a heterojunction FET technology that incorporates a number of significant improvements, including the use of a new heterostructure epitaxial technology, adoption of a T-shaped gate structure and the employment of a new gate metallization system.
Believe it or not, the images show the same interlevel dielectric via holes in [Si.sub.3][N.sub.4] separated by a 2 [[micro]meter] space, an architecture derived from Sandia's GaAs-based complementary heterostructure field effect transistor development program.
One such device was the heterostructure bipolar transistor.
The speed-up ratio of the present numerical code is shown in Figure 2(b) as a function of the total number of cores for ab-initio SCF electron transport calculations of an Al(100)-Si(100)-Al(100) heterostructure. Here, the speed-up ratio is defined as [T.sub.1]/[T.sub.p], where [T.sub.1] and [T.sub.p] are the total elapsed times for serial and parallel computing, respectively.