hole mobility

hole mobility

[′hōl mō‚bil·əd·ē]
(electronics)
A measure of the ability of a hole to travel readily through a semiconductor, equal to the average drift velocity of holes divided by the electric field.
References in periodicals archive ?
Hole mobility is adversely affected in donor-acceptor composite films, as thin film coating technique such as spin coating on account of fast solvent evaporation do not support well-organized growth of P3HT crystals [8].
Teherani; Pouya Hashemi, who was an MIT postdoc at the time and is now with IBM; Dimitri Antoniadis, the Ray and Maria Stata Professor of Electrical Engineering; and colleagues at MIT and the University of British Columbia achieved their record-setting hole mobility by "straining" the germanium in their transistor - forcing its atoms closer together than they'd ordinarily find comfortable.
Dependence of field effect hole mobility of PPV-based polymer films on the spin casting solvent.
5 times higher hole mobility into conventional CMOS technology by combining two substrates in the same wafer.
His studies of defects that a silicon germanium layer has on a silicon lattice led to published papers demonstrating an 80% enhancement in electron mobility in NMOS devices and a 40% acceleration of hole mobility in PMOS devices.
Furthermore, the strain due to the lattice mismatch may be used to improve the hole mobility in the base parallel to the emitter junction.