IGBT


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Related to IGBT: MOSFET, TRIAC

IGBT

IGBT

(Insulated Gate Bipolar Transistor) A power transistor that has characteristics of both MOSFET and bipolar junction transistors (BJTs). Introduced in the 1980s, the IGBT handles high current, a characteristic of BJTs, but enables fast switching with greater ease of control. IGBTs are found in home appliances, electric cars and digital stereo power amplifiers. Modules with multiple IGBTs can support very high voltage and amperage.

Non Punch-Through (NPT) and Punch-Through (PT)
When an IGBT is turned off, it exhibits a "tail current" because holes are left in the drift region. By adding an extra N+ buffer layer in what is known as a "Punch-Through" (PT) architecture, the trapped holes are quickly absorbed. Thus, the PT IGBT switches faster, but typically handles less voltage than the NPT IGBT. See power MOSFET.


NPT and PT IGBTs
To make the IGBT switch faster, the extra N+ buffer layer in the PT architecture absorbs the extra holes when the transistor is turned off.
References in periodicals archive ?
The market for industrial-use IGBT modules is expected to grow at an annual rate of 3.5% from about 350 billion yen in 2018.*2 More and more large-scale wind power generation facilities are being constructed, particularly in Europe and China, and the global market for such facilities is expected to grow by 591 GW in 2018 and 8% annually by 2023 (source: GWEC).
In 2018, IGBTs' global output value was about US$4.7 billion, with an annual growth rate of 16 percent, the research institute said.
The device co-packages a silicon-based IGBT with a SiC Schottky barrier diode, resulting in an excellent tradeoff between the lower performance of silicon-based solutions and the higher cost of entirely SiC-based solutions.
IGBT modules are mainly used for such power conversion system and they are required to be compact, since many power components (e.g.
In the operation of buck mode, [S.sub.1] is the only main IGBT used to transfer the output power and auxiliary IGBT switch [S.sub.a] will turn-on before the main switch [S.sub.1] gets turned-off, in order to obtain zero current transition.
The stage on transistors Q7 and Q8 serves to amplify rectangular pulses in voltage and current sufficient for the key output stage operation on IGBT transistors Q9 and Q10, Q11 and Q12 (IRG4PC50F), included in pairs in each arm of the push-pull circuit.
(i) Short-circuit faults affecting the IGBT switches are the most serious faults.
When IGBT and diode are integrated into a single chip, reverse-conducting IGBT (RC-IGBT) requires the low acceleration and high concentration process to reverse P-shape part in the collector on the backside of the thin wafer to N-shape.
The state-of-the-art advanced IGBT gate drivers target to improve the switching performances, and they can be classified as passive, open-loop and closed-loop types [1].
Total losses of Si IGBT [T.sub.1] are the sum of conduction and switching losses; as a whole, the losses in the six Si IGBTs of the inverter are six times higher, resulting in
The equivalent circuits of slip power recovery when the IGBT is turned ON or OFF are shown in Figure 2, respectively.
* In event of overcurrent, driver initiates controlled switch shutdown with updating control with fault status, protecting the IGBT and system