Since the RF performance of IMPATT diode
is strongly dependent on the carrier ionization rates of the base material, the same must be significantly influenced by the crystal orientation of the substrate (here GaAs).
Currently, the silicon IMPATT diode
is the most powerful solidstate source at W-band frequencies and is being used in several developmental high performance mm-wave systems, such as missile seekers, precision guided weapons and tracking radars.
Early oscillators involved a Gunn or Impatt diode
matched in a waveguide and frequency controlled with a hollow cavity coupled to the waveguide.
In addition, the breakdown voltage of the diode, the current I and the diode's cross-sectional area A all play an important role in determining the noise power spectrum of the IMPATT diode
The IMPATT diode
utilizes two phenomena to generate RF power by effecting a 180 |degrees~ phase shift between the AC voltage and current waveforms, once DC power is provided to the diode and it is properly mounted in a resonant cavity or circuit.
Further integration of another Gunn or IMPATT diode
would increase the active element's output power.
In 1979, he joined Hughes Aircrafts Missile Systems Group, where he worked on high power microwave and mm-wave IMPATT diode
Also, the breakdown voltage of the diode, the current (I) and the diode's cross-sectional area (A), play an important role in determining the noise power spectrum of the IMPATT diode
One reason may be the fact that design and optimization of IMPATt diode
structures require accurate knowledge of material parameters, such as impact ionization rates and saturated drift velocities of electrons and holes.
An active antenna built by integrating a modified bow-tie antenna with an IMPATT diode
at a frequency of 4 GHz has been reported on previously.
technology has been application driven.