IMPATT diode


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IMPATT diode

[′im‚pat ‚dī‚ōd]
(electronics)
A pn junction diode that has a depletion region adjacent to the junction, through which electrons and holes can drift, and is biased beyond the avalanche breakdown voltage. Derived from impact avalanche and transit time diode.
References in periodicals archive ?
Since the RF performance of IMPATT diode is strongly dependent on the carrier ionization rates of the base material, the same must be significantly influenced by the crystal orientation of the substrate (here GaAs).
Currently, the silicon IMPATT diode is the most powerful solidstate source at W-band frequencies and is being used in several developmental high performance mm-wave systems, such as missile seekers, precision guided weapons and tracking radars.
He was previously employed at Raytheon, where he worked on IMPATT diode power combiners, thermal response of IMPATT diodes, broadband directional couplers, Schiffman phase shifters, and filter design.
Early oscillators involved a Gunn or Impatt diode matched in a waveguide and frequency controlled with a hollow cavity coupled to the waveguide.
In addition, the breakdown voltage of the diode, the current I and the diode's cross-sectional area A all play an important role in determining the noise power spectrum of the IMPATT diode.
The IMPATT diode utilizes two phenomena to generate RF power by effecting a 180 |degrees~ phase shift between the AC voltage and current waveforms, once DC power is provided to the diode and it is properly mounted in a resonant cavity or circuit.
Further integration of another Gunn or IMPATT diode would increase the active element's output power.
In 1979, he joined Hughes Aircrafts Missile Systems Group, where he worked on high power microwave and mm-wave IMPATT diode transmitters.
Also, the breakdown voltage of the diode, the current (I) and the diode's cross-sectional area (A), play an important role in determining the noise power spectrum of the IMPATT diode.
One reason may be the fact that design and optimization of IMPATt diode structures require accurate knowledge of material parameters, such as impact ionization rates and saturated drift velocities of electrons and holes.
An active antenna built by integrating a modified bow-tie antenna with an IMPATT diode at a frequency of 4 GHz has been reported on previously.
IMPATT diode technology has been application driven.