MESFET


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MESFET

[′mes‚fet]
References in periodicals archive ?
As with the previous case, in this section we demonstrate the accuracy of the modeling approach with a lower power GaAs MESFET.
Pedro, "Physics Based MESFET Empirical Model," IEEE International Microwave Symposium Digest, San Diego, CA, 1994, pp.
In addition, the GaAs MESFET used in this experiment does not have a gate recess, which tends to cause increased surface-state trap effects.
He joined Infineon Technologies in 1999, where he was involved in the characterization of HBT, MESFET, PHEMT, passive components and in the design of downconverters.
As GaAs MESFET technology continues to advance, large-signal MESFET models are needed to accurately predict performance.
SiC MESFET and GaN HEMT are competing on this market segment as a replacement technology.
This, however, reduces the breakdown voltage that can destroy the gate, which made it impossible for power GaAs MESFET to operate on high voltage.
The basic principle of operation of a MESFET multiplier is that the device is biased for a particular conduction angle, based on the harmonic frequency to be generated.
Various types of RF amplifiers including GaAs MESFET, InGaP HBT, and GaAs HFET amplifiers will be compared.
The model HMC322LP4 broadband non-reflective GaAs MESFET SP8T switch is packaged in a low cost leadless surface-mount package.
This means tbat the proposed SSEC describes correctly the AC behavior of the MESFET for this bias point, where the drain current is not very high and the accumulation of carriers between the gate and the drain is not important.
6-micron MESFET three-metal-interconnect gallium arsenide (GaAs) IC process, TQTRx, for use with Ansoft Designer(TM) v2.