Another method is based on square-law approximation relation of the saturated MOS transistor
between drain current and gate voltage.
O'Reilly, "Simulation-based Reusable posynomial models for MOS transistor
parameters", DATE, 2007.
"Switching response of complementary symmetry MOS transistor
logic circuits," RCA Rev., 25: 627-661
This voltage drop can be reduced by superimposing a bias voltage onto the gate of the MOS transistor
that efficiently eliminates the voltage drop associated with threshold voltage [V.sub.th] .
We rely on the inherent nonlinearity of a MOS transistor
to perform the multiplication operation required by (1) in order to obtain a charge-controlled memristance.
[24.] Tsividis, Y., Operation and Modeling of the MOS Transistor
, 2nd Edition, Oxford University Press, New York, NY, 1999.
The delay is defined more precisely if the discharge current is controlled by a biased MOS transistor
 (Figure 14).
DENSO is committed to further expand its licensing business of the SJ MOS transistor
technology in the global market.
Wong, "Physically-based MOS transistor
avalanche breakdown model," IEEE Transactions on Electron Devices, vol.
They use an accurate but simple MOS transistor
model for design, in order to reduce the distance between hand design and simulation results.
A standard n-channel MOS transistor
is thus converted into a non-volatile memory cell.
Tokyo, Japan, Jan 17, 2006 - (JCN) - The National Institute for Advanced Industrial Science and Technology (AIST) and Tohoku University announced the manufacture of a high-performance upright-type double gate MOS transistor
capable of ultra-large scale integration using neutral beams which cannot damage silicon substrates.