magnetic tunnel junction


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magnetic tunnel junction

[mag¦ned·ik ′tən·əl ‚jəŋk·shən]
(electronics)
A magnetic storage and switching device in which two magnetic layers are separated by an insulating barrier, typically aluminum oxide, that is only 1-2 nanometers thick, allowing an electronic current whose magnitude depends on the orientation of both magnetic layers to tunnel through the barrier when it is subject to a small electric bias.
References in periodicals archive ?
(2012) Shot noise in magnetic tunnel junctions from first principles.
Ando, "Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions," Nature Materials, vol.
LeClair, "Spin-dependent tunnelling in magnetic tunnel junctions," Journal of Physics Condensed Matter, vol.
Khalili Amiri et al., "Enhancement of microwave emission in magnetic tunnel junction oscillators through in-plane field orientation," Applied Physics Letters, vol.
Manchon et al., "Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions," Nature Physics, vol.
Zbarsky et al., "Seebeck effect in magnetic tunnel junctions," Nature Materials, vol.
Chaput et al., "Giant spin-dependent thermoelectric effect in magnetic tunnel junctions," Nature Communications, vol.
NEC's MFF operations were produced by integrating data flip flop (DFF) with magnetic tunnel junctions (MTJ), in addition to circuits that switch the direction of MTJ's magnetization.
TEHRAN (FNA)- Researchers have successfully developed a technology to stack magnetic tunnel junctions directly on the vertical interconnect access.
The 11 papers include discussions of developments in magneto-resistance memory: magnetic tunnel junctions with a composite free layer, graphene active plasmonics for new types of terahertz lasers, deep ultraviolet light-emitting diodes for public health applications, novel cascade diode lasers based on type-I quantum wells, vertical conduction in the new field effect transistors: p-type and n-type vertical channel thin film transistors, and reflections on the future electric power grid monitoring system.
This ability to fabricate such thin layers of single-crystal metal will enable much more economical magnetic tunnel junctions in MRAMs--ones that will require lower currents to switch the direction of magnetic fields, explains Chambers.
The system will be used for the deposition of ultra-thin films of metals and oxides for the fabrication of magnetic devices (magnetic tunnel junctions, Hall sensors).