Caption: FIGURE 1: A schematic of 1D photonic crystal containing N multiple quantum wells
with different refractive index.
Liu, "Enhancement of green emission from InGaN/GaN multiple quantum wells
via coupling to surface plasmons in a two-dimensional silver array," Advanced Functional Materials, vol.
Kim, "Structural and optical characteristics of InGaN/GaN multiple quantum wells with different growth interruption," physica Status Solidi (b), vol.
Suh, "Improved internal quantum efficiency of green emitting InGaN/GaN multiple quantum wells by in preflow for InGaN well growth," Japanese Journal of Applied Physics, vol.
Jeong, "The effects of in flow during growth interruption on the optical properties of InGaN multiple quantum wells grown by low pressure metalorganic chemical vapor deposition," Japanese Journal of Applied Physics, vol.
Wang, "Observation of large Stark Shift in [Ge.sub.x][Si.sub.1-x]/Si Multiple Quantum Wells
Huang et al., "Photoreflectance study of direct-gap interband transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers," Applied Physics Letters, vol.
Tiong, "Characterization of Ge/[Si.sub.0.16][Ge.sub.0.84] multiple quantum wells on Ge-on-Si virtual substrate using piezoreflectance spectroscopy," Solid State Communications, vol.
In this study, we would apply the different methods of current-blocking layer formation on the InGaN/GaN multiple quantum wells