NMOS


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NMOS

[′en‚mȯs]
(electronics)
Metal-oxide semiconductors that are made on p-type substrates, and whose active carriers are electrons that migrate between n-type source and drain contacts. Derived from n-channel metal-oxide semiconductor.

NMOS

(N-Channel MOS) Pronounced "n-moss." A type of microelectronic circuit used for logic and memory chips. NMOS transistors are faster than their PMOS counterpart and more of them can be put on a single chip. It is also used in CMOS design. See MOSFET.
References in periodicals archive ?
The PMOS delay is reduced because delay is more concentrated to PMOS due to high mobility of PMOS compared to NMOS.
NMOS mobility in the (111) and (331) surface was greater than in the (110) surface, and while the center of the gate is still a (110) surface, overall on-current is increased by 10%.
Footnote BCDMOS = Mixed-signal technology with Bipolar, CMOS and DMOS components BLDC = Brushless Direct Current ECU = Electronic Control Unit EMC = Electro Magnetic Compatibility ESD = Electro Static Discharge NMOS = N-type Metal Oxide Semiconductor QFN = Quad Flat No leads SOI= Silicon on Insulator
For the NMOS device, the new technology uses a conventional double-layer gate-electrode structure consisting of a nickel-silicide[4] layer and a silicon layer, but adds impurities to the silicon layer.
Through the use of AOCs, NMOS and Fault Manager centralise and store detailed definitions of behavior characteristics for each network device, including its identity, connectivity and management requirements.
High-k/metal gates on NMOS Si(110) demonstrate respectable output performance due to velocity saturation of electrons, the authors found.
The new thin-, mid- and thick oxide NMOS and PMOS devices with optimized area and very low Ron resistance as well as a new Metal-Insulator-Metal capacitor (MIMCAP) make the 20V option a competitive solution for fabless design houses and IDMs developing power management products and display drivers for battery powered applications.
RiverSoft's NMOS approach cuts through that complexity, providing a level of automation and timeliness that offers tremendous value to providers of business-critical networking services.
Key to the Producer Celera system is its integrated multi-step deposition and cure process that achieves the industry's highest PECVD tensile stresses in NMOS devices.
Each includes a very low resistance NMOS pass transistor, and the ISL80113 can deliver an ultra-low 75mV dropout voltage at 3A.
Using a combination of proprietary and traditional processes, BALL Semiconductor developed five-micron NMOS inverter circuits on a one-millimeter spherical surface.
SEMATECH is investigating several variations of this approach, such as using silicon or silicon-germanium for NMOS and Ge or Si-Ge for PMOS channels; or III-V materials on Si platform for NMOS in the near future.