photoresist

(redirected from Negative resists)
Also found in: Dictionary.

photoresist

[′fōd·ō·ri‚zist]
(graphic arts)
A light-sensitive coating that is applied to a substrate or board, exposed, and developed prior to chemical etching; the exposed areas serve as a mask for selective etching.

Photoresist

 

a photosensitive polymer coating applied to the surface of a semiconductor plate with an oxide film. Photoresists are used in semiconductor electronics and microelectronics to produce areas of a specific configuration that permit access of an etching agent onto the plate.

The properties of a photoresist are altered on exposure to ultraviolet light or an electron beam through a glass template of the required configuration applied to the photoresist. Either the solubility of the photoresist is sharply reduced (in the case of a negative photoresist), or the photoresist is decomposed and may be easily removed (in the case of a positive photoresist). Subsequent treatment with a solvent forms the access areas in the nonirradiated segments of a negative photoresist or in the irradiated segments of a positive photoresist. Negative photoresists consist of layers of polyvinyl alcohol with chromates or cinnamic acid esters and layers of cyclized rubber with additives that produce crosslinking of the macromolecules under the action of light. Positive photoresists consist of a phenol-formaldehyde or cresol-formal-dehyde resin with ortho-naphthoquinone diazide.

REFERENCES

Fotolitografiia i optika. Moscow-Berlin, 1974.
Mazel’, E. Z., and F. P. Press. Planarnaia tekhnologiia kremnievykh priborov. Moscow, 1974.

photoresist

A film used in photolithography that temporarily holds the pattern of a circuit path or microscopic element of a chip. When exposed to light, it hardens and is resistant to the acid bath that washes away the unexposed areas. Not to be confused with photoresistor.
References in periodicals archive ?
Depending on the type resist the equipment is designed for reactive plasma etching (Reactive Ion Etching - RIE) (not) exposed to positive and negative resists.
Topics addressed in the book include optical and chemical origins, negative resists, anti-reflection coatings and reflectivity control, the semiconductor lithographic process, x-ray and extreme ultraviolet lithographies, and advanced resist processing and resist resolution limit issues, among others.
The polymers predominantly applied as negative resists in electron beam microlithography such as glycidylmethacrylate copolymers (COP) or chloromethylstyrene are of course very sensitive but their resolution potentials are limited because the dissolution in organic developers is accompanied by swelling processes.
beam or [Gamma]-irradiation conditions yield an alkali insoluble ester (1) and exhibit negative resist properties after an additional flood exposure (reaction I, where Hal denotes a halogen atom).
The mask aligner showed excellent process capabilities for a variety of positive and negative resists as well as a stunning alignment accuracy.
IDEAL avoids complex OPC and PSM shifter layout issues and the technology is compatible with both positive and negative resists.

Full browser ?