photoresist

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photoresist

[′fōd·ō·ri‚zist]
(graphic arts)
A light-sensitive coating that is applied to a substrate or board, exposed, and developed prior to chemical etching; the exposed areas serve as a mask for selective etching.
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.
The following article is from The Great Soviet Encyclopedia (1979). It might be outdated or ideologically biased.

Photoresist

 

a photosensitive polymer coating applied to the surface of a semiconductor plate with an oxide film. Photoresists are used in semiconductor electronics and microelectronics to produce areas of a specific configuration that permit access of an etching agent onto the plate.

The properties of a photoresist are altered on exposure to ultraviolet light or an electron beam through a glass template of the required configuration applied to the photoresist. Either the solubility of the photoresist is sharply reduced (in the case of a negative photoresist), or the photoresist is decomposed and may be easily removed (in the case of a positive photoresist). Subsequent treatment with a solvent forms the access areas in the nonirradiated segments of a negative photoresist or in the irradiated segments of a positive photoresist. Negative photoresists consist of layers of polyvinyl alcohol with chromates or cinnamic acid esters and layers of cyclized rubber with additives that produce crosslinking of the macromolecules under the action of light. Positive photoresists consist of a phenol-formaldehyde or cresol-formal-dehyde resin with ortho-naphthoquinone diazide.

REFERENCES

Fotolitografiia i optika. Moscow-Berlin, 1974.
Mazel’, E. Z., and F. P. Press. Planarnaia tekhnologiia kremnievykh priborov. Moscow, 1974.
The Great Soviet Encyclopedia, 3rd Edition (1970-1979). © 2010 The Gale Group, Inc. All rights reserved.

photoresist

A film used in photolithography that temporarily holds the pattern of a circuit path or microscopic element of a chip. When exposed to light, it hardens and is resistant to the acid bath that washes away the unexposed areas. Not to be confused with photoresistor.
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References in periodicals archive ?
Novolacs with naphthoquinone diazide as radiation labile compound under [e.sub.-]-beam or [Gamma]-irradiation conditions yield an alkali insoluble ester (1) and exhibit negative resist properties after an additional flood exposure (reaction I, where Hal denotes a halogen atom).
Usually, the sensitivity of a negative resist - as a measure for the increase of molecular weight per irradiation dose - changes symbatically with the initial molecular weight.

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