Ohmic Resistance

Also found in: Dictionary, Thesaurus.

ohmic resistance

[′ō·mik ri′zis·təns]
Property of a substance, circuit, or device for which the current flowing through it is proportional to the potential difference across it.
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.
The following article is from The Great Soviet Encyclopedia (1979). It might be outdated or ideologically biased.

Resistance, Ohmic


an old term for the resistance presented to a direct current by an electric circuit. The Ohmic resistance is the limiting value of the AC, or effective, resistance as ω → 0, where ω is the frequency of an alternating current. The term “Ohmic resistance” emphasizes the fulfillment of Ohm’s law—that is, the existence of a linear relationship between the current and voltage.

The Great Soviet Encyclopedia, 3rd Edition (1970-1979). © 2010 The Gale Group, Inc. All rights reserved.
References in periodicals archive ?
Relative resistance change [DELTA][R.sub.p] < 1 indicates improved CNT surface activity, and relative ohmic resistance [DELTA][R.sub.[ohm]] < 1 indicates improved conductivity, whereas values above 1 for [DELTA][R.sub.p] and [DELTA][R.sub.[ohm]] indicate impaired properties.
The equation can be used to calculate the ohmic resistance with a maximum deviation of 10%.
The variation of the ohmic resistance as function of the graphite loading with constant amount of AChE is depicted in Figure 2(a).
During culture, the surface-normalized ohmic resistance increased up to 832 [OMEGA]*[cm.sup.2] and the normalized capacitance decreased to 1.43 [micro]F/[cm.sup.2].
Ohmic resistance and mass transfer losses could be decreased using membrane-less configuration that in fact makes it cost effective due tosoil acts proton exchange membrane which reduces the expenses of proton exchange membrane (PEM) [22].
A new double sliding mode observer was designed to identify the battery internal ohmic resistance and to estimate the SOC.
Referring to Figure 1 and the earlier work published by Ahmad and Bhattacharjee [8], the procedure for measurement of half-cell potential, that is, corrosion potential ([E.sub.corr]) and generation of data required to determine Ohmic resistance (R), and polarization resistance ([R.sub.p]) are as follows.
The symbols are defined as follows: [R.sub.[OMEGA]]: ohmic resistance, [R.sub.f,A] : anode Faradaic resistance, [C.sub.dl,A] : anode double-layer capacitance, [R.sub.f,C]: cathode Faradaic resistance, [C.sub.dl,C] : cathode double-layer capacitance, [omega].
For lengths greater than the mean free path value (l > [[lambda].sub.CNT]), scattering leads to an additional ohmic resistance which increases with length as [R.sub.S] = [R.sub.F](l/[[lambda].sub.CNT]) [7].
From the I-V curves of the device annealed at 500[degrees]C, the observed linear characteristics indicate that a high-quality Ohmic contact has been obtained at the junction area of NCD and Au with relatively low Ohmic resistance. However, it is not unreasonable to notice here that the thermal treatment may lead to graphitization or disorderization of [sp.sup.3] structure which hampers the photovoltaic efficiency of the NCD as absorbance layer.
Considering its ohmic resistance characteristics and ohmic capacitive characteristics, a resistor and a capacitor are in series; thus, the model in Figure 11 is proposed, which has 5 independent component values.