Such contacting method provided mechanically stable ohmic contact
to the sample, which was then verified by thermal cycling over a wide range of temperatures.
They obtained a low ohmic contact
resistance of 700 [OHM] between a multiwalled CNT (MWCNT) and tungsten (W) surface.
In a part of [p.sup.+]n SCs, [n.sup.+]-Si film for back surface field (BSF) as well as ohmic contact
with back Ag electrode was grown on the back surface of Si wafer, with a thickness [d.sub.BSF] among 10 to 1000 nm.
To achieve a good ohmic contact
, the evaporated Ag was annealed at 500[degrees]C for 30 min.
In order to provide high isolation at higher frequencies, a shunt capacitive switch is provided after each ohmic contact
After opening contact holes, Ti/Al/Ni/Au metal layer for Ohmic contact
was deposited and followed by rapid thermal annealing at 850[degrees]C for 30 s in [N.sub.2] ambient.
Yang and his colleagues also use a Z-scheme in their system only they deploy two Earth abundant and stable semiconductors - silicon and titanium oxide - loaded with co-catalysts and with an ohmic contact
inserted between them.
First, the influence of the soil and the ohmic contact
due to the soles of the shoes on the induced current density distribution is analyzed.
Electrodes on the back of these power devices have two purposes: To make ohmic contact
with Si substrates and to provide solder joints with heat sink substrates.
(Titanium provides a stable ohmic contact
when deposited directly on silicon and alloys to it forming a titanium silicide.)
Contact resistivity is dependent on doping density, and it prevents the formation of good ohmic contact
because of surface state Fermi level pinning except the heavily doped regions in semiconductor.