PMOS


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PMOS

[′pē‚mȯs]
(electronics)
Metal-oxide semiconductors that are made on n-type substrates, and whose active carriers are holes that migrate between p-type source and drain contacts. Derived from p-channel metal-oxide semiconductor.

PMOS

(Positive channel MOS) Pronounced "p-moss." A type of microelectronic circuit in which the base material is positively charged. PMOS transistors were used in the first microprocessors and are still used in CMOS. They are also used in low-cost products (calculators, watches, etc.). See MOSFET.
References in periodicals archive ?
Total harmonic distortion (THD)'s of the proposed NMOS and PMOS structures are measured as 1.
However, it was found that PMOS contact resistance increases with the implantation of aluminum, causing a drop in PMOS on-current.
Thus, the discharged capacitor is recharged again through these PMOS transistors.
By employing high-temperature heat treatment and optimized structures, the technology makes it possible to fully silicide[5] just the PMOS gate electrode, by using nickel which has been widely used in the past as a silicide material.
Combined with the innovations described in (1), which improve mobility by suppressing impurity scattering, these techniques allowed drive currents to be increased by 22% for NMOS and 31% for PMOS, compared to 65nm nodes from NEC Electronics.
The XNOR module employed six transistors (6T) (three PMOS transistors and three NMOS transistors).
0V NMOS and PMOS devices (substrate based, floating, low leakage and high threshold voltage options) and fully characterized passives including various capacitors.
A detailed design was proposed by Filanovsky and Baltes (1994) where the switching thresholds are dependent on the ratio of NMOS and PMOS.
The LT8391 provides both internal (128:1) and external (2,000:1) LED current PWM dimming using an external high side PMOS switch.
In the following text provides a description of the vision of integral security and the tasks and roles of the enable PMOS.
The FOD3184 consists of an aluminum gallium arsenide (AIGaAs) light emitting diode optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated into the circuit power stage.
These PMOS should be able by means of an integrated vision of security, optimize security.