Piezoresistive effect | Article about Piezoresistive effect by The Free Dictionary
piezoresistance effect (redirected from Piezoresistive effect)
Also found in: Wikipedia
piezoresistance effect[pē‚ā·zō·ri′zis·təns i‚fekt]
The change in the electrical resistance of a metal or semiconductor that is produced by mechanical stress.
References in periodicals archive
The piezoresistive effect
in conductive polymer composites, particularly those filled with carbon black, has been documented as early as 1966  and several proceeding studies have examined their mechanisms and applications [9-11].
To perform ultrasound measurements, electrical signals produced in a generator are converted into mechanical oscillations with frequencies in the MHz range in an ultrasonic converter (transmitter) using the piezoresistive effect
(figure 1) (refs.
It is interesting to note that MEMS technology established vis-a-vis the discovery of the piezoresistive effect
at Bell Laboratories in 1955 by Charles Smith is approximately the same 'age' as Integrated Circuit (IC) technology established vis-a-vis the semiconductor effect that was discovered at the same laboratory by Bardeen et al.
This intrinsic piezoresistive effect
is more than an order of magnitude more sensitive to strain than the extrinsic effect - elastic stretching - that metal strain gauges rely on.
Microanalyses for Piezoresistive Effect
on Actual and Modeled Interfaces of RuO2-Glass Thick Film Resistors (M.