power MOSFET


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power MOSFET

A type of metal oxide semiconductor field effect transistor (MOSFET) used to switch large amounts of current. Power MOSFETs use a vertical structure with source and drain terminals at opposite sides of the chip. The vertical orientation eliminates crowding at the gate and offers larger channel widths. In addition, thousands of these transistor "cells" are combined into one in order to handle the high currents and voltage required of such devices.

Following are the common types of power MOSFETs. The last example is a combination MOSFET and bipolar junction transistor (BJT), known as an "insulated gate bipolar transistor" (see IGBT). See MOSFET.


Power MOSFETs
All power MOSFETs use a vertical structure in which the source and drain are at opposite sides of the chip. The last example is a combination of MOSFET and bipolar technologies, which is typically used in higher power applications.
References in periodicals archive ?
Power MOSFET trench technologies, such as OptiMOS-T2, exhibit significant improvement in both RDS(on) and gate charge compared to previous technology.
For these and other low-voltage applications, lower gate voltage power MOSFETs improve the efficiency for extended battery life and reduce the heat dissipation involved in switching the loads.
The increased cell density capable with these photo tools also enabled successful power MOSFETs with a BVDSS range less than 100 V, enabling new automotive, power supply, and motor control applications.