radiative recombination

radiative recombination

[′rād·ē‚ād·iv ri‚käm·bə′nā·shən]
(physics)
Recombination of parts of an atom or of an electron and a hole in a semiconductor during which electromagnetic radiation is emitted.
References in periodicals archive ?
The aim of these studies is to establish the nature of different radiative recombination processes in this material and to compare it with that characteristic of bulk nanostructured PbCd[I.sub.2] solid solutions.
where [U.sub.Y] [approximately equal to] [f.sub.n,[gamma]] [f.sub.p,[gamma]]/[[tau].sub.r,[gamma]] and [G.sub.[gamma]] are the net interband radiative recombination and photogeneration rates of the [gamma] subband state ([gamma] = WL, ES, GS), respectively.
A larger slope attained for np-GaN (high-intensity regime) for the excitation-emission curve (Figure 4) indicates a larger [[tau].sub.nr] and, in turn, a more efficient radiative recombination of free excitons in np-GaN as compared to epi-GaN.
He covers critical indices of the metal-insulator transition, different types of hopping conductivity including nearest-neighbor hopping and variable-range hopping with and without the existence of a soft Coulomb gap at the Fermi level, hopping spectroscopy, nontrivial effects such as negative magneto-resistance and electron-electron interaction-assisted hopping, 1/f noise and electronic devices based on hopping conduction, and inter-impurity radiative recombination and hopping photoconductivity.
reported that the peak within the red region is generated by radiative recombination of excitons on the surface of PSi [20].
Material GaAs [A.sub.l0.8] [Ga.sub.0.2]As Band Gap(eV) 1.42 [10] 2.09 [11] Electron affinity (eV) 4.07 [10] 3.53 [11] Dielectric permittivity(relative) 13.18 [10] 10.68 [11] Eelectron mobility ([cm.sup.2]/Vs) Varied [12] 212 [13] Hole mobility ([cm.sup.2]/Vs) Varied [12] 67 [13] Radiative recombination coefficient 7.20E-10 [10] 7.50E-10 [11] ([cm.sup.3]/Vs) Lattice constant a(A[degrees]) 5.65 [10] 5.64 [13] Absorption coefficient Data from [14] Data from [11] Fig.
But sometimes, they fall into a hole and emit a photon, an energy-squandering process called radiative recombination.
Photoluminescence is introduced as a radiative recombination of electron-hole pairs created by the injection of photons.
Given that silicon is an indirect-gap semiconductor, the phonon-assisted radiative recombination is very inefficient.
In the [DELTA][Eg.sup.Front] cases, larger slope will build up a higher barrier and cause the carriers to be localized in the valley to release energy via radiative recombination. In conclusion, there is an inversely proportional relation between the electric field intensity and recombination intensity.
Two spectral bands of photoluminescence have been observed within all types of samples: a narrower band of green luminescence (G-PL) peaked at 500 nm, which can be associated with interband radiative recombination, and a wider spectral band of red luminescence (R-PL) with a peak at 700 nm, which can be ascribed to deep trap mediated radiative transitions.
Chapter 2, the most important part of the book, explains the basic makeup of LEDs and their I-V characteristics, and the achievement of photoluminescence by radiative recombination. Tables and diagrams explain the transition processes in direct band-gap semiconductors and the energy levels and refractive indices for various III-V compound semiconductors.