RRAM

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RRAM

(Resistive RAM) A category of non-volatile memory technologies that can modify the structure of a storage cell to have a conductive low resistance or non-conductive high resistance. In 2012, using silicon oxide, the University College of London (UCL) prototyped an RRAM chip that was considerably faster than flash memory while using a fraction of the power. Considered a type of memristor and also called "ReRam," commercial products have yet to materialize. See MRAM, phase change memory, programmable metallization cell and memristor.


Crossbar's RRAM
When voltage is applied to the electrodes, Crossbar's RRAM cell switches between high and low resistance. (Image courtesy of Crossbar Inc., www.crossbar-inc.com)
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ReRAM (resistive RAM) and PCRAM (phase change RAM) are fast, nonvolatile, low-power, high-density memories that can be used as "storage class memory" to fill the widening price-performance gap between server DRAM and storage.
This would impact the reliable operation of a ReRAM device because it will also produce a gradual decrease in the voltage needed for a new SET operation as will be shown later.
By adding the new 4 Mbit ReRAM MB85AS4MT to its lineup, Fujitsu Semiconductor can now further expand the options it offers to meet the diversifying needs of its customers.
Park et al., "Excellent selector characteristics of nanoscale V[O.sub.2] for high-density bipolar ReRAM applications," IEEE Electron Device Letters, vol.
Dr Tony Kenyon of UCL's Electronic and Electrical Engineering department said: "Our ReRAM memory chips need just a thousandth of the energy and are around a hundred times faster than standard Flash memory chips.
The team's new ReRAM technology was discovered by accident whilst engineers at UCL were working on using the silicon oxide material to produce silicon-based LEDs.
We will definitely watch the race between flash and memristor-memories to see how interesting it gets, but in the race of S/DRAMs and a ReRAM, the legacy will fall flat without a doubt.
Through utilizing microcomputers with mounted ReRAM, it will be possible to achieve high-speed rewriting and longer operational times in battery-powered equipment, such as portable devices and security devices etc., reducing the amount of maintenance required.
In his new role Sivaram will be responsible for the ongoing development of SanDisk's NAND flash memory, as well as the development of next-generation technologies, including 3D NAND (BiCS) and 3D ReRAM. He will report to Sanjay Mehrotra, SanDisk's president and chief executive officer.
today announced the development of a new type of resistive RAM(ReRAM)[1], a type of non-volatile memory[2], which combines low power consumption with limited fluctuation of resistance value.