SICS

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Related to SICS: Asics, SIAC, SISC

SICS

Swedish Institute for Computer Science

References in periodicals archive ?

With a soft start in October, the Indoor Archery Center at SIC held its grand opening celebration on Friday.

SIC archers shoot ribbon to celebrate Indoor Archery Center Archery: Center available to all ages

The preoperative Endothelial Cell Count (EC) in the study group that underwent SICS had a minimum endothelial cell count of 1871/[mm.

Changes in endothelial cell count and central corneal thickness in manual small incision cataract surgery versus phacoemulsification cataract surgery

The board also read positive correspondence from retired nursing instructor Shirley Oshel regarding SICs top ranked nursing program.

Improvements, new buildings coming to SIC Updates: Improvements, new buildings coming to SIC

Bureau of Labor Statistics (BLS) show that accident rates for SIC 3080 ("Miscellaneous Plastics Products") remained well above the average for all manufacturing in 1997, the most recent year for which figures were available at press time.

Not safe enough

GeneSiC's SPICE models are compared to the experimentally measured data on all device datasheets and are applicable to all 1200 V and 1700 V SiC Junction Transistors released.

Gate Driver Board and SPICE Models for Silicon Carbide Junction Transistors (SJT) Released

Different SiC polytypes have widely varying physical properties.

Generalized analytical model for SiC polytypic heterojunctions/Uldistatud analuutiline mudel SiC-polutuupsetele heterosiiretele

A new type of conducting material can be prepared by modification of SiC particles with a conducting polymer, for example, polypyrrole or polyaniline.

Preparation, surface chemistry, and electrical conductivity of novel silicon carbide/polypyrrole composites containing an anionic surfactant

Other abrasive surfaces also can be used for the planar grinding step, such as 240- or 320-grit water-cooled SiC abrasive paper.

Metallography for cast aluminum alloys

INTRINSIC has developed the first commercially available, zero micropipe SiC substrates using their ZMP(TM) technology.

INTRINSIC Semiconductor to be Acquired by Cree

SiC Junction Transistors (SJT) offered by GeneSiC exhibit ultra-fast switching capability (similar to that of SiC MOSFETs), a square reverse biased safe operation area (RBSOA), as well as temperature-independent transient energy losses and switching times.

GeneSiC Releases 25 mOhm/1700 V Silicon Carbide Transistors

SiC metal-oxide-semiconductor (MOS) devices are expected to play a leading role in next generation power metal-oxide-semiconductor field-effect transistors (MOSFETs) due to their large band gap and high thermal conductivity.