diodes are available in 600 Volts (3, 4, 5, 6, 8, 9, 10, and 12 A), in both TO-220 and DPAK packages, and in 1200 V products (2, 5, 8, 10, and 15 A) in TO-220 package.
For RFID applications, the low barrier MA4IQP900L-1291T modulator replaces a discrete balun, quadrature hybrid and Schottky
diodes with a single, monolithic device.
Cai et al., "High-k/metal-gate fully depleted SOI CMOS with single-silicide Schottky
source/drain with sub-30-nm gate length," IEEE Electron Device Letters, vol.
The thermionic field emission theory based model for metal (M)-semiconductor (S)-metal (M) system with two corresponding Schottky
barriers at M/S interface was used to approximate the obtained nonlinear IVCs for [Bi.sub.2][S.sub.3] nanowires (detailed process in [21, 22]).
The negative TPV of experiment result can be attributed to the Schottky
barrier at the metal-HgCdTe interface.
Two multifinger Schottky
electrodes forming a metal-semiconductor-metal (MSM) diode were implemented by thermally depositing a 30 nm mixture of Pd and Si[O.sub.2] with a weight ratio of 3.
diodes have been widely accepted as a useful solution for Terahertz (THz) applications.
ST's new 200V power Schottky
rectifier diode, the STPS60SM200C, will be used in high-current AC/DC power supplies delivering nominal DC output voltages in the 30-50V range.
To make these electrons go even deeper into the material--to reach and pass through the Schottky
barrier--Kaiser and his colleagues added a third electrode to the two used in an STM system.
• Includes Vishay's Gen IV MOSFET technology and a low-side MOSFET with integrated Schottky
A new silicon carbide (SiC) MOSFET design kit facilitates evaluation of the company's MOSFET and Schottky
diode performance in a configurable half-bridge circuit.