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The analysis of the I-V curves obtained in the temperature range of 25-300 K (Figure 5(a)) shows that the dependencies are symmetric, qualitatively similar to each other with the preservation of two distinct Schottky barriers in the entire temperature range.
These characteristics present two symmetrical Schottky barriers, which are formed in different directions of current flow and charge transfer from a silicon substrate to metal clusters.
To study the distribution of boron in the region near the surface (on top of p-region), Ni-p-3C-SiC Schottky barriers have been fabricated and their C-V characteristics have been measured.
The distribution of boron in very thin region near surface is obtained by using capacitance-voltage (C-V) measurements of Ni-p-SiC Schottky barriers. These methods allow obtaining of the distribution of electrically active impurities in the crystal, whereas the depth profiling by SIMS gives information on the total content of impurity including impurity atoms in nonactive interstitial sites and in inclusions of secondary phase in crystal.
The work function of Pd is higher than that of [TiO.sub.2], which is why when the specimens are put under UV illumination, the electrons migrate from [TiO.sub.2] particles to the surface of Pd particles which results in charge separation and the formation of Schottky barriers at Pd-[TiO.sub.2] contact region.
However, for TP plots whose surface layer is Pd-modified [TiO.sub.2], the interactions between the movement of the electrons to the surface as a result of the existence of Schottky barriers and the transmission of the electrons to the interior of the film as a result of the reaction (3) are determining factors for the absence of any peak in these plots.
A CNFET acts as two Schottky barriers connected via a low-field Drude resistance.
Caption: Figure 1: Electrical characterization of individual [Bi.sub.2][S.sub.3] nanowires: (a) SEM image of connected [Bi.sub.2][S.sub.3] nanowire ([d.sub.NW]-80nm); (b) IVC of [Bi.sub.2][S.sub.3] nanowire with nonlinear dependence; solid fit corresponds to simulated IVC with two reverse Schottky barriers; extracted Schottky barrier height [[phi].sub.1] [approximately equal to] [[phi].sub.2] = 0.6 eV; relative humidity level = 5%.
Heller, "Barrier height and leakage reduction in n-GaAs-platinum group metal Schottky barriers upon exposure to hydrogen," Journal of Vacuum Science and Technology B, vol.
Cardon, "On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers," Solid State Electronics, vol.
While unsettling, the new data on Schottky barriers are expected to have a posititive effect in device development.