giant magnetoresistance

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giant magnetoresistance:

see spintronicsspintronics,
 spin electronics,
or magnetoelectronics,
science and technology that harnesses the spin state of electrons in addition to the electrical charge state to store data or perform calculations.
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giant magnetoresistance

[¦j̄i·ənt ‚mag·nēd·ō·ri′zis·təns]
(solid-state physics)
A very large decrease in electrical resistance upon application of a magnetic field in certain structures composed of alternating layers of magnetic and nonmagnetic metals.
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.
References in periodicals archive ?
Nam et al., "Sensitivity enhancement of a giant magnetoresistance alternating spin-valve sensor for high-field applications," Journal of Applied Physics, vol.
reported the magnetoresistance properties of black phosphorus (BP) spin-valve devices consisting of thin BP flakes contacted by NiFe ferromagnetic electrodes.
The original spin-valve device could only regulate electrical current flow, but the researchers expected they eventually could modify it to also emit light, making the new organic spin valve a spin OLED.
The first widely used spintronic device--the GMR spin-valve head, pioneered by IBM in 1997, was a highly-sensitive magnetic field sensor and has enabled hard-disk drives to read smaller data bits, leading to a more than 40-fold increase in data-storage density over the past seven years.
An understanding of these principles and effects is critical to modern-day magnetic storage applications such as spin-valve computer hard drive read heads and such future applications as integrated magnetic memory.
What he called a "dual spin-valve design" helps to reduce the bit-error rate and a new combination of metallic "layers" increases the head's sensitivity.
Shatz, "Etching of spin-valve capping layers for sensor stabilization applications," IEEE Transactions on Magnetics, vol.
Researchers at the National Institute of Standards and Technology (NIST), Gaithersburg, Md., have found a way to switch spin-valve devices in magnetic random access memory (MRAM) with precison and control.
A particular type of thin-film magnetic device called a spin-valve can be engineered to have two stable states of electrical resistance based on the relative magnetization orientation of its ferromagnetic layers.
Tang et al., "Spin-valve effect in NiFe/MoS2/NiFe junctions," Nano Letters, vol.

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