Tri-Gate transistor

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Tri-Gate transistor

An Intel 3D transistor design introduced in 2011 with its Ivy Bridge microarchitecture. The Tri-Gate design is considered 3D because the gate wraps around a raised source-to-drain channel, called a "fin," instead of residing on top of the channel in the traditional 2D planar design. In addition, multiple fins are used, which provide greater control of each state. See Ivy Bridge, transistor and transistor concept.

Better Performance
Because the gate wraps around the fin (channel), the Tri-Gate transistor provides greater performance and less current leakage. Multiple fins are ganged together through the same gate to enable more current in the "on" state and less current in the "off" state. (Images courtesy of Intel Corporation.)

Six Fins Each
The matrix (center) on this chip is an actual image of three transistors and six fins. The drains from the first become the sources for the second, and so on. Metal layers interconnect all the source, drain and gate elements to complete the circuit design. (Image courtesy of Intel Corporation.)
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References in periodicals archive ?
The Core i7-3770K is based on a 22nm process incorporating tri-gate transistors popularly known as 3D transistors, which allows faster switching of states, and packing in more transistors.
Intel will further accelerate the Ultrabook innovation in 2012 with third generation Intel Core processors, codenamed "Ivy Bridge," with the help of its 22nm 3D tri-gate transistors.
Intel's CEO said the company's engineers will further accelerate Ultrabook innovation with Intel's "Ivy Bridge" 22nm technology early next year with the help of the company's revolutionary 3-D Tri-gate transistors.
Powered by 3rd generation Intel CoreTM Processors, made with the world's most advanced 22nm 3-D tri-gate transistors, these new Ultrabook devices are responsive and more secure to better protect personal information.
Future microprocessors developed on Intel's next-generation 22nm manufacturing process are due in systems starting next year and will deliver even more energy-efficient performance as a result of the company's breakthrough 3-D Tri-Gate transistors that make use of a new transistor structure.

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