Tri-Gate transistor


Also found in: Dictionary, Thesaurus.

Tri-Gate transistor

An Intel 3D transistor design introduced in 2011 with its Ivy Bridge microarchitecture. The Tri-Gate design is considered 3D because the gate wraps around a raised source-to-drain channel, called a "fin," instead of residing on top of the channel in the traditional 2D planar design. In addition, multiple fins are used, which provide greater control of each state. See Ivy Bridge, transistor and transistor concept.


Better Performance
Because the gate wraps around the fin (channel), the Tri-Gate transistor provides greater performance and less current leakage. Multiple fins are ganged together through the same gate to enable more current in the "on" state and less current in the "off" state. (Images courtesy of Intel Corporation.)







Six Fins Each
The matrix (center) on this chip is an actual image of three transistors and six fins. The drains from the first become the sources for the second, and so on. Metal layers interconnect all the source, drain and gate elements to complete the circuit design. (Image courtesy of Intel Corporation.)
References in periodicals archive ?
The combination of Intel's cutting-edge 3-D tri-gate transistor technology and architectural enhancements help make possible up to double the 3-D graphics and HD media processing performance compared with Intel's previous generation of chips.
Intel's 3-D Tri-Gate transistor technology and 22nm manufacturing process provides significant benefits over legacy planar designs," said Jim Finnegan, senior vice president of engineering at Netronome.
Anticipating this, Intel research scientists in 2002 invented what they called a Tri-Gate transistor, named for the three sides of the gate.
Tri-gate transistors are likely to play a critical role in Intel's future energy efficient performance capabilities because they offer considerably lower leakage and consume much less power than today's planar transistors.
Since originally announced last year, Intel researchers have successfully shrunk the size of the tri-gate transistor (measured by the gate length) from 60 nanometers (nm) to 30 nm.
Intel's tri-gate transistor employs a novel 3-D structure, like a raised, flat plateau with vertical sides, which allows electronic signals to be sent along the top of the transistor and along both vertical sidewalls as well.
Tri-Gate transistors, which have only been in development at Intel for the last decade, improve performance and energy efficiency in the company's Core line of chips, starting with Ivy Bridge processors released in 2012.
The Core i7-3770K is based on a 22nm process incorporating tri-gate transistors popularly known as 3D transistors, which allows faster switching of states, and packing in more transistors.
Intel will further accelerate the Ultrabook innovation in 2012 with third generation Intel Core processors, codenamed "Ivy Bridge," with the help of its 22nm 3D tri-gate transistors.
Intel's CEO said the company's engineers will further accelerate Ultrabook innovation with Intel's "Ivy Bridge" 22nm technology early next year with the help of the company's revolutionary 3-D Tri-gate transistors.
These SoCs are based on the Intel Silvermont microarchitecture, utilizing Intel s industry-leading 22nm process technology with 3-D Tri-Gate transistors, which deliver significant improvements in computational HMI performance and energy efficiency.
Intel's leading-edge 14nm low-power process technology, which includes the second generation of Tri-Gate transistors, is optimized for low-power applications.

Full browser ?