Murarka, "Multilevel interconnections for ULSI
and GSI era," Materials Science and Engineering R: Reports, vol.
Terrestrial Radiation Effects in ULSI
Devices and Electronic Systems
Ahmed, "Characterization of ultra-thin oxides using electrical C-V and I-V measurements," in Proceedings of the International Conference on Characterization and Metrology for ULSI
This volume presents the proceedings of the March 2005 International Conference on Characerization and Metrology for ULSI
[ultra large scale integrated] Technology, the fifth in a series of conferences devoted solely to silicon semiconductor characterization and metrology.
There's a viable solution to the need for titanium- and tantalum-based liner films that work in emerging semiconductor ULSI
manufacturing process flows.
Characterization and Metrology for ULSI
Technology: 2000, containing the proceedings for the June 2000 International Conference on Characterization and Metrology for ULSI
Technology, was published in February 2001.
The increasing need for improved quality products and the ease of fabricating pure wafers for ultra-large-scale integration (ULSI
) processes have hiked the demand for sophisticated semiconductor wafer cleaning technologies and equipment.
A CMOS inverter is a building block for other gates to build a complete ultralarge-scale-integrated (ULSI
on Characterization and Metrology of ULSI
Tech., May 23-27, 1998, Gaithersburg, MD, pp.
The device was developed by researchers at the System LSI and ULSI
Development Centers of Mitsubishi Electric Corp., Itami, Hyogo, Japan.