FinFET

(FIN Field Effect Transistor) A 3D transistor architecture that uses a raised channel (the "fin") from source to drain. FinFETs replaced CMOS for technology nodes smaller than 20 nm. For example, Intel's Tri-Gate is a type of FinFET transistor (for design details, see Tri-Gate transistor). See SuperFin, CMOS, FET and MOSFET.

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References in periodicals archive

To comprehend Global (United States, European Union and China) FinFET Technology market dynamics in the world mainly, the worldwide FinFET Technology market is analyzed across major global regions.

FinFET Technology Market: Major Technology Giants in Buzz Again / TSMC, Samsung, Intel, United Microelectronics, Qualcomm, MediaTek

In this section, we overview the FinFET firstly and then optimize the Dual Threshold FinFETs based on the modulation of the gate work function, the silicon body thickness, and the oxide thickness according to the theories.

Comprehensive Optimization of Dual Threshold Independent-Gate FinFET and SRAM Cells

The [R.sub.sd] variations for SOI FinFETs are dominantly affected by NiSi/Si contact resistance [20, 27].

DC Performance Variations of SOI FinFETs with Different Silicide Thickness

In reference 1, several real failing silicon chips manufactured in a FinFET technology with known timing-related defects identified by PFA were used to validate the proposed methodology.

Identifying transistor-level yield limiters in the finFET era

A 64-bit carry propagate adder (CPA) designed in 32-nano meter FinFET technology, operated in 1.3 V supply voltage shown in fig.

Design of a low power multimode adder for 32-bit pipelined MIPS processor

Using 10nm FinFET, the Snapdragon 835 processor will offer a smaller chip footprint, providing OEMs more usable space inside upcoming products to support larger batteries or slimmer designs.

Qualcomm, Samsung collaborate to advance chip design

It will be the first time the 14-nanometer FinFET process is used for a SoC aimed at midrange phones, previously only used for premium products, the company said.

Samsung to Produce 14nm SoC for Budget Models

According to Samsung, its new 14nm LPP process, incorporating three-dimensional (3D) FinFET structure on transistors, enables significant performance boost and low power consumption.

Samsung commences mass production of second generation 14nm FinFET Logic process technology

The work function difference between the gate and the channel of a FinFET dictates the threshold voltage of the device.

Ultra-low leakage arithmetic circuits using symmetric and asymmetric finFETs