quantum well

[¦kwän·təm ′wel]

(electronics)

A thin layer of material (typically between 1 and 10 nanometers thick) within which the potential energy of an electron is less than outside the layer, so that the motion of the electron perpendicular to the layer is quantized.

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References in periodicals archive

V-shaped defects [5-7] readily form at InGaN/GaN quantum wells (QWs) having high indium mole fractions, triggered by threading dislocations in the buffer layer.

Using pre-TMIn treatment to improve the optical properties of green light emitting diodes

Son et al., "Surface modifications and optical properties of blue InGaN single quantum well by in-situ thermal treatments," Physica Status Solidi (C), vol.

Effect of same-temperature GaN cap layer on the InGaN/GaN multiquantum well of green light-emitting diode on silicon substrate

Wang, "Observation of large Stark Shift in [Ge.sub.x][Si.sub.1-x]/Si Multiple Quantum Wells," J.

Silicon-based optical-microwave integrated circuits

Gerthsen et al., "Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope," Applied Physics Letters, vol.

Spatially resolved cathodoluminescence in the vicinity of defects in the high-efficiency InGaN/GaN blue light emitting diodes

For a classical infinite square quantum well of width 2L, the solution is known to take the form

Calculating the energy spectrum of complex low-dimensional heterostructures in the electric field

In order to specify the obtained mnH(L) features, we have solved the one dimensional Schrodinger equation for finite quantum wells based on the envelope function approximation [23] including the effects of strain.

Photoreflectance spectroscopy characterization of Ge/[Si.sub.0.16][Ge.sub.0.84] multiple quantum wells on Ge virtual substrate

Pandey and Thomas E George treat the electrons confined in a quantum well as a kind of gas consisting of electrons moving randomly at various speeds.

Light-induced current in a quantum well