Particularly crystalline semiconductors with definite energy
band gap are required in developing various electronic devices.
The chemical structure of the CPEs provide a unique set of properties, including water solubility and processability, main-chain-controlled exciton and charge transport, variable
band gap light absorption and fluorescence, ionic interactions, and aggregation phenomena [1].
"In addition, by simply modifying the width of the graphene strips between the pores (the number of carbon atoms), this
band gap can be controlled.
It can be seen from Figure 6 that the GaN FE and DBE emissions exhibit obvious red shift with increasing temperature, indicating the reduction of the
band gap of GaN layer.
In this section, dependence of the
band gap (BG) of the infinitely thick ML-UR on the host dielectric material [[epsilon].sub.r] is presented.
Diffuse reflectance spectroscopy (DRS) spectra were acquired on a PerkinElmer Lambda 35 spectrophotometer with an integration sphere with a resolution of [+ or -]1nm; from the reflectance spectra, the Kubelka-Munk function was determined and the
band gap energy was estimated [12, 13].
Depth profiles from SIMS and AES were used to compare the compositional distributions and to determine the
band gap in the CIGS solar cells.
It has
band gap of 1.53 eV that match to optimal spectra (1.39eV) and large absorption coefficient [alpha]=1x105 cm-1.
It is shown that, the occurrence of vacancies induces an increase of density of high-energy occupied states and the
band gap modification is obtained.
The cadmium zinc sulfide (CdZnS) thin film is one of the promising materials which is used as a wide
band gap (larger than 2.5 eV) window material in hetrojunction solar cells and in photoconductive devices.