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quantum Hall effect

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quantum Hall effect

[′kwän·təm ′hȯl i‚fekt]
(electronics)
A phenomenon exhibited by certain semiconductor devices at low temperatures and high magnetic fields, whereby the Hall resistance becomes precisely equal to (h / e 2)/ n, where h is Planck's constant, e is the electronic charge, and n is either an integer or a rational fraction. Also known as von Klitzing effect.
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.
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References in periodicals archive
Zhang et al., "Room-temperature quantum hall effect in graphene," Science, vol.
Wybourne, Powers of the Vandermonde determinant and the quantum Hall effect, J.
Although remarkable progress has been made [19-22], a complete theory of the quantum Hall effect is still missing.
Peres, "Edge and surface states in the quantum Hall effect in graphene," Physical Review B, vol.
Coverage here encompasses the history of Si, MEMS, and NEMS, followed by discussion of crystallography, quantum mechanics, the band theory of solids, the silicon single crystal, photonics, the quantum hall effect, and superconductivity.
The international standard for electrical resistance is provided by the Quantum Hall Effect, a phenomenon whereby electrical properties in 2D materials can be determined based only on fundamental constants of nature.
Placing graphene samples in magnetic fields whose intensities the researchers ratcheted up, they saw the electrical resistance increasing in discrete steps, a phenomenon known as the quantum Hall effect. Around the same time, a group led by Philip Kim of Columbia University made the same discovery after learning of Geim's tape-peeling technique.
Keywords: ac quantum Hall effect; dc quantum Hall effect; frequency dependences; multifrequency bridge; quadruple-series connections; single-series connections.
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