acceptor level

acceptor level

[ak′sep·tər ‚lev·əl]
(solid-state physics)
An energy level in a semiconductor that results from the presence of acceptor atoms.
References in periodicals archive ?
It can be seen from Figure 5(c) that the acceptor level in the valence band maximum of GaN:[V.sub.Ga] is mainly contributed by N2p electron states.
Ga vacancy will introduce a deep acceptor level near the Fermi level.
Effect of Vacancy Defects on the Electronic Structure and Optical Properties of GaN
This suggests however that acceptor behavior via Sb-doping is not necessarily simple formation of an isolated acceptor level but involves defect complexes within the material, which we believe to be the relevant mechanism for appreciable room temperature hole conduction.
An understanding of the reaction pathways and specific model to explain the acceptor level is the key to stable and reproducible p-type ZnO.
Progress in ZnO acceptor doping: what is the best strategy?
The result shows that N-doped ZnS is promised to be p-type, but the ionization energy is calculated to be 144 meV, which is still deep acceptor level.
This suggests that N doping generates a deep acceptor level above the valence band.
Low-resistivity p-type doping in wurtzite ZnS using codoping method
Based on the literature data [20-22], levels of the background nitrogen impurity, the acceptor levels of boron and aluminum, and the vacancy levels and traps in 4H silicon carbide are presented in Figure 1.
As one can see from the diagram, transitions from the valence band to the conduction band (beginning at 3.23 eV), transitions of electrons through acceptor levels of boron to the conduction band (from 2.6 to 2.9 eV), and transitions from the valence band to boron levels (from 0.35 to 0.65 eV) should be observed.
Spectral Dependence of Optical Absorption of 4H-SiC Doped with Boron and Aluminum
For p-type metal oxide semiconductors, the adsorbed oxygen will form acceptor levels near the valence band at the surface, resulting in the upward band bending and formation of an accumulation layer of holes.
The influence of atmosphere on electrical property of copper oxide nanoparticles
Given the optical absorption bandgap and the need to set the acceptor levels sufficiently below the polymer's LUMO for efficient exciton separation, increasing the Voc in a single-layer bulk heterojunction device can be challenging.
Silver nanoparticle-doped titanium oxide thin films for intermediate layers in organic tandem solar cell
Hence, the acceptor levels located apart about 0.1 and 0.2 eV higher of the edge of the CISCuT valence band make a contribution to the barrier formation at a free surface of the CISCuT layers studied.
Properties of CuIn[S.sub.2] free surface and the effect of conductive polymer layers on these properties/Elektrit juhtiva polumeerkile moju CuIn[S.sub.2] pinna omadustele
One exciting discovery is that substituting tin oxide ([SnO.sub.2]) for [TiO.sub.2] sufficiently chang es the acceptor levels and electronic coupling efficiencies to produce cells with absorbed photon-to-current efficiencies approaching 40 %, constant across the visible spectrum.
SOLAR CELL ELECTRON TRANSFER DYNAMICS MEASURED BY NIST SCIENTISTS
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