avalanche breakdown


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avalanche breakdown

[′av·ə‚lanch ′brāk‚dau̇n]
(electronics)
Nondestructive breakdown in a semiconductor diode when the electric field across the barrier region is strong enough so that current carriers collide with valence electrons to produce ionization and cumulative multiplication of carriers.
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.
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Covering electrochemistry, the power sciences, and power integration, they discuss matters such as "water-in-salt" electrolyte to enable high voltage aqueous lithium-ion chemistries, in-situ studies on the electrochemical intercalation of the hexafluorophosphate anion in graphite with selective co-intercalation of solvent, the catalytic oxidation of hydrocarbons and Army jet fuels for small scale combustion, integrated thermal management for power electronics packaging, and the performance of a one-kilovolt silicon carbide avalanche breakdown diode.
The first parameter is the avalanche breakdown voltage associated with the multiplication layer.
It should be also noted that while at such bias type III avalanche breakdown is usually observed [6], in the samples studied, probably type II breakdown regime is still realized because all additional breakdown sites can be associated with grain boundaries; however, this point was not studied in detail here.
The company offers a product line of overvoltage protection and overcurrent protection components, which include transient voltage suppressors (TVS arrays), avalanche breakdown diodes, steering diode TVS arrays, PPTC devices, and electronics SMD chip fuses.
Electronic circuits, employing bipolar junction transistors biased into the avalanche breakdown region are known for many years [1], [2].
Avionics TVSs are invariably semiconductor devices, such as avalanche breakdown diodes (ABDs).
The sharp decrease in the value of insulation resistance after some time was expected to be governed by the avalanche breakdown (ABD) of the dielectric.
A good test might well be to simulate both the avalanche condition created by the poor bipolar layout and the hot electron effect by screening the device with a relatively high current in the avalanche breakdown mode, as shown in Figure 5.
When the stress voltage reaches the avalanche breakdown of the drain, current begins to flow.
The diode is mounted upside down so that a positive voltage applied to the package lid is reverse bias for the P/N junction, as IMPATT diodes are always operated in reverse avalanche breakdown.