The method is applied to the calibration of a noise set-up using on-wafer noise sources (a reverse-biased cold-FET and an avalanche noise diode).
A commercial avalanche noise diode chip (Noise-Coin NC-406) wire-bonded to the microstrip end (see Figure 7) of a coplanar-to-microstrip transition, Probe Point[TM] 1003 Adapter Substrate from Jmicro, is used as a hot source.
A reverse-biased cold-FET and an avalanche noise diode are used as mismatched on-wafer noise sources up to 40 GI-Iz.
In spite of several simplifications, the studies of available noise[5,6] yield a fairly accurate description of the avalanche noise source.
Based on these simplifications, the power spectral density of the available power from an avalanche noise source can be written as [Mathematical Expression Omitted] (1) where [Mathematical Expression Omitted] (2)
It should be further noted that Hines' theory, in spite of its simplifications, yields a fairly accurate description of the avalanche noise power for f << [f.sub.a] and f >> [f.sub.a].
Stillman, "The Determination of Impact lonization Coefficients in (100) Gallium Arsenide Using Avalanche Noise and Photocurrent Multiplication Measurements," IEEE Trans.
Blue, "A Small-Signal Theory of Avalanche Noise in IMPATT Diodes," IEEE Trans.