avalanche photodiode


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avalanche photodiode

[′av·ə‚lanch ‚fōd·ō′dī‚ōd]
(electronics)
A photodiode operated in the avalanche breakdown region to achieve internal photocurrent multiplication, thereby providing rapid light-controlled switching operation.
References in periodicals archive ?
The avalanche photodiode is more complex, consisting of more layers of silicon material than the pin photodiode.
They are: resistor thermal noise, avalanche photodiode noise and voltage amplifier noise.
The G8931-20 InGaAs avalanche photodiode features a large, 0.2-mm diameter active area and a high-speed response of 0.9 GHz.
This monolithic 16 element linear silicon avalanche photodiode array, based on a NearIR enhanced APD processing design, has a spectral response range of 400-1100 am.
MPPCs, otherwise known as SiPMs, are a semiconductor photon counting device made up of multiple APD (avalanche photodiode) pixels operated in Geiger mode.
The Geiger-Mode Avalanche Photodiode (GM APD) Focal Plane Array (FPA), an invention of Massachusetts Institute of Technology's Lincoln Laboratory, Lexington, Mass., can detect and time-stamp single photons by using its unique, independent digital time-of-flight counting circuits, and its extremely high internal detector gain.
The SU055-GM-APD-FO, an indium gallium arsenide/indium phosphide near-infrared avalanche photodiode (APD), is suited for single-photon counting at wavelengths of 0.9 to 1.6 microns.
introduces the first indium phosphide single photon counting avalanche photodiode (SPAD) designed for optimum performance at 1.06 [micro]m.
A new series of highly sensitive, low noise X-ray detectors is based on proprietary Large Area Avalanche Photodiode (LAAPD) technology.