The avalanche photodiode
is more complex, consisting of more layers of silicon material than the pin photodiode.
They are: resistor thermal noise, avalanche photodiode
noise and voltage amplifier noise.
The G8931-20 InGaAs avalanche photodiode
features a large, 0.2-mm diameter active area and a high-speed response of 0.9 GHz.
This monolithic 16 element linear silicon avalanche photodiode
array, based on a NearIR enhanced APD processing design, has a spectral response range of 400-1100 am.
MPPCs, otherwise known as SiPMs, are a semiconductor photon counting device made up of multiple APD (avalanche photodiode
) pixels operated in Geiger mode.
The Geiger-Mode Avalanche Photodiode
(GM APD) Focal Plane Array (FPA), an invention of Massachusetts Institute of Technology's Lincoln Laboratory, Lexington, Mass., can detect and time-stamp single photons by using its unique, independent digital time-of-flight counting circuits, and its extremely high internal detector gain.
The SU055-GM-APD-FO, an indium gallium arsenide/indium phosphide near-infrared avalanche photodiode
(APD), is suited for single-photon counting at wavelengths of 0.9 to 1.6 microns.
introduces the first indium phosphide single photon counting avalanche photodiode
(SPAD) designed for optimum performance at 1.06 [micro]m.
A new series of highly sensitive, low noise X-ray detectors is based on proprietary Large Area Avalanche Photodiode