band gap


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band gap

[′band ‚gap]
(solid-state physics)
An energy difference between two allowed bands of electron energy in a metal.

bandgap

In a material, the energy difference between its non-conductive state and its conductive state. There is virtually no bandgap in most metals, but a very large one in an insulator (dielectric). In a semiconductor, the bandgap is small. Technically, the bandgap is the energy it takes to move electrons from the valence band to the conduction band.
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Particularly crystalline semiconductors with definite energy band gap are required in developing various electronic devices.
Conductive Polyaniline on Paper as a Flexible Electronic Material With Controlled Physical Properties Through Vapor Phase Polymerization
The chemical structure of the CPEs provide a unique set of properties, including water solubility and processability, main-chain-controlled exciton and charge transport, variable band gap light absorption and fluorescence, ionic interactions, and aggregation phenomena [1].
Photophysical Properties and Orbital Energy Calculation in Diketopyrrolopyrrole Based Conjugated Polyelectrolytes
"In addition, by simply modifying the width of the graphene strips between the pores (the number of carbon atoms), this band gap can be controlled.
New Graphene Discovery Could Finally Punch the Gas Pedal, Drive Faster CPUs
It can be seen from Figure 6 that the GaN FE and DBE emissions exhibit obvious red shift with increasing temperature, indicating the reduction of the band gap of GaN layer.
Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure
In this section, dependence of the band gap (BG) of the infinitely thick ML-UR on the host dielectric material [[epsilon].sub.r] is presented.
Line Defect-Layered EBG Waveguides in Dielectric Substrates
Diffuse reflectance spectroscopy (DRS) spectra were acquired on a PerkinElmer Lambda 35 spectrophotometer with an integration sphere with a resolution of [+ or -]1nm; from the reflectance spectra, the Kubelka-Munk function was determined and the band gap energy was estimated [12, 13].
Photocatalytic Activity under Simulated Sunlight of Bi-Modified Ti[O.sub.2] Thin Films Obtained by Sol Gel
Depth profiles from SIMS and AES were used to compare the compositional distributions and to determine the band gap in the CIGS solar cells.
Quantitative Analysis and Band Gap Determination for CIGS Absorber Layers Using Surface Techniques
Moewes, "Band gap engineering of graphene oxide by chemical modification," Carbon, vol.
Structural and Optical Studies of Cadmium Sulfide Quantum Dot-Graphene Oxide-Chitosan Nanocomposite Thin Film as a Novel SPR Spectroscopy Active Layer
It has band gap of 1.53 eV that match to optimal spectra (1.39eV) and large absorption coefficient [alpha]=1x105 cm-1.
ADSORPTION OF LEAD ANTIMONY SULPHIDE QUANTUM DOTS ON THE ZnO NANOSTRUCTURED PHOTOELECTRODE, FOR SOLAR CELL APPLICATIONS
It is shown that, the occurrence of vacancies induces an increase of density of high-energy occupied states and the band gap modification is obtained.
Vacancy induced energy band gap changes of semiconducting zigzag single walled carbon nanotubes
The cadmium zinc sulfide (CdZnS) thin film is one of the promising materials which is used as a wide band gap (larger than 2.5 eV) window material in hetrojunction solar cells and in photoconductive devices.
Preparation and characterization of zinc doped CdS thin films for photovoltaic applications
On the other hand, electronic properties of h-BN layers are considerably different from those of graphene; graphene is a gapless material with metallic conduction [12], and the h-BN atomic layers possess a wide band gap [13-15].
Formation and Physical Properties of h-BN Atomic Layers: A First-Principles Density-Functional Study

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