barrier capacitance

barrier capacitance

[′bar·ē·ər kə‚pas·əd·əns]
(electronics)
The capacitance that exists between the p-type and n-type semiconductor materials in a semiconductor pn junction that is reverse-biased so that it does not conduct. Also known as depletion-layer capacitance; junction capacitance.
References in periodicals archive ?
According to [15] the simplified equivalent circuit of p-in junction at direct applied bias consists of diffusion capacity (which is parallel to barrier capacitance) and series resistance (Figure 7(a)).
This is in agreement with pulsed barrier capacitance (BELIV) characteristics [18], where the most qualitative CdS-[Cu.sub.2]S junctions (with clearly expressed barrier capacitance and a relatively small leakage current) were obtained on CdS substrates of the III-type.
These observations are in agreement with BELIV characteristics, where the most qualitative CdS[Cu.sub.2]S junctions (with clearly expressed barrier capacitance) were obtained on CdS substrates of the II-type.
This is in agreement with BELIV characteristics, where the most qualitative CdS-[Cu.sub.2]S junctions (with clearly expressed barrier capacitance and a relatively small leakage current) were obtained on CdS substrates of the III-type.